Journal of Vacuum Science & Technology B

Label

• Journal of Vacuum Science & Technology B (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Evaluation of DyScO(x) as an alternative blocking dielectric in TANOS memories with Si(3)N(4) or Si-rich SiN charge trapping layers (Articolo in rivista) (Prodotto della ricerca)
• Lateral distribution of field-emitted electrons from a carbon nanofiber array: A theoretical calculation (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)

Language

• eng (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#issn

• 2166-2746 (literal)

Preferred label

• Journal of Vacuum Science & Technology B (literal)

Publisher

• AVS - Eray Aydil Cary, NC USA (literal)

Incoming links:

Rivista

• Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)
• Evaluation of DyScO(x) as an alternative blocking dielectric in TANOS memories with Si(3)N(4) or Si-rich SiN charge trapping layers (Articolo in rivista) (Prodotto della ricerca)
• Lateral distribution of field-emitted electrons from a carbon nanofiber array: A theoretical calculation (Articolo in rivista) (http://www.cnr.it/ontology/cnr/individuo/prodotto/TIPO1101)