Evolution of Interface Properties During Atomic Layer Deposition of Rare Earth-based High-k Dielectrics on Si, Ge and III-V Substrates (Contributo in atti di convegno)

Type
Label
  • Evolution of Interface Properties During Atomic Layer Deposition of Rare Earth-based High-k Dielectrics on Si, Ge and III-V Substrates (Contributo in atti di convegno) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • Lamagna L, Wiemer C, Baldovino S, Molle A, Perego M, Schamm-Chardon S, Coulon PE, Fanciulli M (2010)
    Evolution of Interface Properties During Atomic Layer Deposition of Rare Earth-based High-k Dielectrics on Si, Ge and III-V Substrates
    in MRS Spring Meeting: Symposium I: Materials for End-of-Roadmap Scaling of CMOS Devices, San Francisco, California, USA
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lamagna L, Wiemer C, Baldovino S, Molle A, Perego M, Schamm-Chardon S, Coulon PE, Fanciulli M (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
  • In the effort to integrate new dielectrics on novel channel materials, the investigation of the oxide/semiconductor interface properties is still a matter of debate [1]. Although atomic layer deposition retains an established consideration for its accurate control in film thickness and composition, it is now clear that such a chemical deposition method involves a variety of possible interfacial reactions with the substrate that may be determinant for the electrical performances [2]. Indeed, physical and chemical interfacial details might vary as a result of combining different growth parameters and surface preparations. In this work we report on atomic layer deposition of rare earth-based oxides (i.e. La-doped ZrO2 and Er-doped HfO2) on various semiconductors. The growth of high-k dielectrics was studied on Si and then transferred on Ge and III-V substrates specifically addressing the interface formation and modification during the deposition. In this respect, an in situ monitoring, performed with spectroscopic ellipsometry, provides insights on the very early stages of the deposition [3]. The analysis of the actual formation of the first nanometers of the film reveals different growth behaviors depending on the starting surface, like nucleation delay or substrate oxidation. To elucidate this aspect, the role of the surface preparation is specifically addressed by comparing films grown on H-terminated Si(100), native oxide free Ge(100) and III-V semiconductor compounds (GaAs(100), InxGa1-xAs(100)). Thorough diagnostic of the oxide and interfaces features has been performed on a wide range of oxide stoichiometries (1-50% La or Er) in order to support the in situ study. The growth rates are discussed with regard to the interface evolution, the oxide stoichiometry and also to the final crystallographic structure. X-ray reflectivity and spectroscopic ellipsometry were extensively combined to extract the high-k and interfacial layer thickness supporting atomic structure images, obtained by high-resolution transmission electron microscopy. A distinct amorphous interfacial layer was observed on Si(100) being, on the contrary, ruled out on Ge(100). Si and Ge diffusion throughout the high-k were evidenced by Time of Flight Second Ion Mass Spectroscopy and Electron Energy Loss Spectroscopy. A direct deposition approach or the use of intentional ultra thin interface passivation layers were examined atop III-V materials. Complementary compositional and electrical characterizations of the stacks further support the interfacial details study. (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1. Laboratorio MDM, CNR-IMM, Agrate Brianza, Italy; 2. Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, Milano, Italy; 3. CEMES-CNRS and Université de Toulouse, nMat group, Toulose, France. (literal)
Titolo
  • Evolution of Interface Properties During Atomic Layer Deposition of Rare Earth-based High-k Dielectrics on Si, Ge and III-V Substrates (literal)
Prodotto di
Autore CNR

Incoming links:


Autore CNR di
Prodotto
data.CNR.it