Reliability of RF MEMS Switches due to Charging Effects and their Circuital Modelling (Contributo in atti di convegno)

Type
Label
  • Reliability of RF MEMS Switches due to Charging Effects and their Circuital Modelling (Contributo in atti di convegno) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Alternative label
  • Marcelli R, Bartolucci G, Papaioannu G, De Angelis G, Lucibello A, Proietti E, Margesin B, Giacomozzi F, Deborgies F (2009)
    Reliability of RF MEMS Switches due to Charging Effects and their Circuital Modelling
    in Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS, DTIP 2009, Roma, 1-3 April 2009
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Marcelli R, Bartolucci G, Papaioannu G, De Angelis G, Lucibello A, Proietti E, Margesin B, Giacomozzi F, Deborgies F (literal)
Pagina inizio
  • 313 (literal)
Pagina fine
  • 316 (literal)
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  • http://www.eda-publishing.org/dtip09_proceedings.pdf (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume
  • Proceedings of the Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS, DTIP 2009, 1-3 April 2009, Roma, Italy (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 4 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-IMM Roma FBK-irst. Trento University of Athens ESA-ESTEC, Noordwijk, The Netherlands (literal)
Titolo
  • Reliability of RF MEMS Switches due to Charging Effects and their Circuital Modelling (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn
  • 978-2-35500-009-6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autoriVolume
  • AA.VV. (literal)
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  • Tarik BOUROUINA, Bernard COURTOIS, Reza GHODSSI, Jean Michel KARAM, Aurelio SOMA, Hsiharng YANG (literal)
Abstract
  • The reliability of RF MEMS switches is typically reduced by charging effects occurring in the dielectrics. The aim of this paper is to discuss these effects, and to propose an equivalent circuit model which accounts for most of the physical contributions present in the structure. (literal)
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