Testing silicon MEMS structures subjected to thermal loading by digital holography (Contributo in atti di convegno)

Type

• Contributo in atti di convegno (Classe)
• Prodotto della ricerca (Classe)

Label

• Testing silicon MEMS structures subjected to thermal loading by digital holography (Contributo in atti di convegno) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1117/12.524441 (literal)

Alternative label

• Ferraro P. [1]; De Nicola S. [2]; Coppola G. [1] ; Finizio A.[2]; Iodice M. [1]; Magro C. [3]; Pierattini G. [2] (2004)
  Testing silicon MEMS structures subjected to thermal loading by digital holography
  in 3rd Conference on Reliability, Testing, and Characterization of MEMS/MOEMS III, San Jose, CA, USA, JAN 26-28, 2004
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Ferraro P. [1]; De Nicola S. [2]; Coppola G. [1] ; Finizio A.[2]; Iodice M. [1]; Magro C. [3]; Pierattini G. [2] (literal)

Pagina inizio

• 235 (literal)

Pagina fine

• 243 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#titoloVolume

• Reliability, Testing, and Characterization of MEM/MOEMS III (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#volumeInCollana

• 5343 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• Proc. SPIE 5343, 235 (2004) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto

• We have applied digital holography (DH) as interferometric tool for measuring the out of plane deformation of Micro-Electro-Mechanical structures. DH has been adopted as method for determining with high accuracy deformations due to the residual stress introduced by fabrication process evaluating MEMS behavior subjected to thermal load. A thermal characterization of these structures requires to cope two fundamental problems. The first one regards the loss of the focus due to thermal expansion of the MEMS sample support. With an out-of-focus image, a correct reconstruction of the sample image can not be obtained. To overcome the problem an auto-tracking procedure has been adopted. The other problem regards the direct comparison of images reconstructed at two different distances. In fact, in DH the numerical reconstruction image is enlarged or contracted according to the reconstruction distance. To avoid this problem, we have adopted a novel but very simple method for keeping constant the image size by imposing the reconstruction pixel constant through the fictitious enlargement of the number of the pixel of the recorded digital holograms. These procedures have been employed in order to characterize MEMS with different shapes and dimensions. The measured profiles obtained by DH can be employed to evaluate both the residual stress induced during the fabrication processes and its dependence on the temperature. (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• [1] Istituto per la Microelettronica e Microsistemi del CNR Via P. Castellino 111, 80131 Napoli, Italy [2] Istituto di Cibernetica del CNR,\"E. Caianiello\", ViaCampi Flegrei 34, Pozzuoli, Italy [3] STMicroelectronics Stradale Primosole, 50, 95121 Catania, Italy (literal)

Titolo

• Testing silicon MEMS structures subjected to thermal loading by digital holography (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#isbn

• 0-8194-5251-3 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#curatoriVolume

• Tanner, DM; Ramesham, R (literal)

Abstract

• We have applied digital holography (DH) as interferometric tool for measuring the out of plane deformation of Micro-Electro-Mechanical structures. DH has been adopted as method for determining with high accuracy deformations due to the residual stress introduced by fabrication process evaluating MEMS behavior subjected to thermal load. A thermal characterization of these structures requires to cope two fundamental problems. The first one regards the loss of the focus due to thermal expansion of the MEMS sample support. With an out-of-focus image, a correct reconstruction of the sample image can not be obtained. To overcome the problem an auto-tracking procedure has been adopted. The other problem regards the direct comparison of images reconstructed at two different distances. In fact, in DH the numerical reconstruction image is enlarged or contracted according to the reconstruction distance. To avoid this problem, we have adopted a novel but very simple method for keeping constant the image size by imposing the reconstruction pixel constant through the fictitious enlargement of the number of the pixel of the recorded digital holograms (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Tecniche di imaging per lo studio e l'analisi di materiali microstrutturati (MD.P03.015.001) (Modulo)
• Istituto di cibernetica \"Edoardo Caianiello\" (ISASI) (Istituto)

Autore CNR

• GIUSEPPE COPPOLA (Persona)
• PIETRO FERRARO (Unità di personale interno)
• SERGIO DE NICOLA (Persona)
• MARIO IODICE (Unità di personale interno)
• GIOVANNI PIERATTINI (Unità di personale interno)
• ANDREA FINIZIO (Unità di personale interno)

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• Parole chiave di "Testing silicon MEMS structures subjected to thermal loading by digital holography" (Insieme di parole chiave)

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Autore CNR di

• PIETRO FERRARO (Unità di personale interno)
• SERGIO DE NICOLA (Persona)
• ANDREA FINIZIO (Unità di personale interno)
• MARIO IODICE (Unità di personale interno)
• GIOVANNI PIERATTINI (Unità di personale interno)
• GIUSEPPE COPPOLA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Istituto di cibernetica \"Edoardo Caianiello\" (ISASI) (Istituto)
• Tecniche di imaging per lo studio e l'analisi di materiali microstrutturati (MD.P03.015.001) (Modulo)

Insieme di parole chiave di

• Parole chiave di "Testing silicon MEMS structures subjected to thermal loading by digital holography" (Insieme di parole chiave)