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Technological and Design Improvements for RF MEMS Shunt Switches (Contributo in atti di convegno)

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Technological and Design Improvements for RF MEMS Shunt Switches (Contributo in atti di convegno) (literal)

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Giacomozzi F, Calaza C, Colpo S, Mulloni V, Collini C, Margesin B, Farinelli P, Casini F, Marcelli R, Mannocchi G, Vietzorreck L (2007)
Technological and Design Improvements for RF MEMS Shunt Switches
in 2007 International Semiconducator Conference, IEEE CAS 2007, Sinaia, Romania, October 15 - 17, 2007
(literal)

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Giacomozzi F, Calaza C, Colpo S, Mulloni V, Collini C, Margesin B, Farinelli P, Casini F, Marcelli R, Mannocchi G, Vietzorreck L (literal)

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Proceedings of the 2007 International Semiconducator Conference, IEEE CAS 2007 (literal)

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This paper reports on the successive improvements introduced in the shunt switches fabricated with the RF MEMS multiuser technology platform available at FBK-irst. In the course of a multiyear development several technological features and design methods have been made available to enhance the operation of capacitive switches. This work analyzes their effects by reviewing the behaviour of the FBK-irst capacitive switches at three different stages of this optimization process. Improvements have been assessed by means of DC electromechanical characterizations, which use a simple quasistatic C-V measurement to extract the switch actuation voltage and the capacitance in the on and off states (Con and Coff) and RF measurements. The addition of a floating metal layer into the process flow has allowed a great increase of the switch on state capacitances, getting Con/Coff ratios of 200, up to 50 times greater than the ones obtained for the same structures without this feature. (literal)

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Note

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FBK-irst, Trento Università di Perugia CNR-IMM Roma TAS-I, Roma TUM, Munchen, Germany (literal)

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Editors: Dan Dascalu, General Chairman; Adrian Rusu, Technical Program Chair (literal)

Abstract

This paper reports on the successive improvements introduced in the shunt switches fabricated with the RF MEMS multiuser technology platform available at FBK-irst. In the course of a multiyear development several technological features and design methods have been made available to enhance the operation of capacitive switches. This work analyzes their effects by reviewing the behaviour of the FBK-irst capacitive switches at three different stages of this optimization process. Improvements have been assessed by means of DC electromechanical characterizations, which use a simple quasistatic C-V measurement to extract the switch actuation voltage and the capacitance in the on and off states (Con and Coff) and RF measurements. The addition of a floating metal layer into the process flow has allowed a great increase of the switch on state capacitances, getting Con/Coff ratios of 200, up to 50 times greater than the ones obtained for the same structures without this feature. (literal)

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