Temperature dependent low energy electron microscopy study of Ge growth on Si(113) (Articolo in rivista)

Type
Label
  • Temperature dependent low energy electron microscopy study of Ge growth on Si(113) (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.apsusc.2005.12.021 (literal)
Alternative label
  • Clausen, T; Schmidt, T; Flege, JI; Locatelli, A; Mentes, TO; Heun, S; Guo, FZ; Falta, J (2006)
    Temperature dependent low energy electron microscopy study of Ge growth on Si(113)
    in Applied surface science
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Clausen, T; Schmidt, T; Flege, JI; Locatelli, A; Mentes, TO; Heun, S; Guo, FZ; Falta, J (literal)
Pagina inizio
  • 5321 (literal)
Pagina fine
  • 5325 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 252 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 15 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Bremen, Inst Solid State Phys, D-28359 Bremen, Germany; Sincrotrone Trieste, I-34012 Trieste, Italy; CNR, INFM, Lab Nazl TASC, I-34012 Trieste, Italy; JASRI, SPring 8, Sayo, Hyogo 6795198, Japan (literal)
Titolo
  • Temperature dependent low energy electron microscopy study of Ge growth on Si(113) (literal)
Abstract
  • We investigated the initial Ge nucleation and Ge island growth on a Si(113) surface using low energy electron microscopy and low energy electron diffraction. The sample temperature was varied systematically between 380 degrees C and 590 degrees C. In this range, a strong temperature dependence of the island shape is observed. With increasing temperature the Ge islands are elongated in the [332] direction. Simultaneously, the average island size increases while their density decreases. From the Arrhenius-like behaviour of the island density, a Ge adatom diffusion barrier height of about 0.53 eV is deduced. (c) 2005 Elsevier B.V. All rights reserved. (literal)
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