The effect of substrate nitridation temperature and buffer design on the quality of GaN epitaxial films (Contributo in atti di convegno)

Type
Label
  • The effect of substrate nitridation temperature and buffer design on the quality of GaN epitaxial films (Contributo in atti di convegno) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • M.Losurdo, D.Giuva, P.Capezzuto, G.Bruno G. Namkoong, A.W. Doolittle, A. S. brown (2003)
    The effect of substrate nitridation temperature and buffer design on the quality of GaN epitaxial films
    in EW-MOVPE-X 10th European Workshop on Metalorganic Vapour Phase Epitaxy, Giugno 8-11 2003, Lecce (Italy), Lecce (Italy)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • M.Losurdo, D.Giuva, P.Capezzuto, G.Bruno G. Namkoong, A.W. Doolittle, A. S. brown (literal)
Titolo
  • The effect of substrate nitridation temperature and buffer design on the quality of GaN epitaxial films (literal)
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