http://www.cnr.it/ontology/cnr/individuo/prodotto/ID85818
Strain evaluation in SiC MEMS test structures (Contributo in atti di convegno)
- Type
- Label
- Strain evaluation in SiC MEMS test structures (Contributo in atti di convegno) (literal)
- Anno
- 2009-01-01T00:00:00+01:00 (literal)
- Alternative label
Bosi M.; Attolini G.; Watts B. E.; Frigeri C.; Rossi F.; Poggi A.; Roncaglia A.; Mancarella F.; Martinez O.; Hortelano V. (2009)
Strain evaluation in SiC MEMS test structures
in EURO CVD 17 / CVD 17, Vienna, 4-9 Oct. 2009
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Bosi M.; Attolini G.; Watts B. E.; Frigeri C.; Rossi F.; Poggi A.; Roncaglia A.; Mancarella F.; Martinez O.; Hortelano V. (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
- In: EURO CVD 17 / CVD 17 - EURO CVD 17 / CVD 17 (Vienna, 04-09/10 2009). Proceedings, vol. 28 (8) pp. 1031 - 1037. (ECS Transactions, vol. 25 (8)). The Electrochemical Society - ECS Transactions, 2009. (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#descrizioneSinteticaDelProdotto
- ABSTRACT: This work presents the growth of β SiC on silicon by VPE performed in a home built, horizontal, cold wall reactor. Test structures used to assess the stresses in the film were obtained either by an etch through the wafer from the bottom side of the wafer to produce membranes or an attack from the front to reveal cantilevers. Membranes and cantilevers presented both compressive and tensile strain, depending on film thickness. Raman spectroscopy was used to study strain and defects. (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- CNR-IMEM, Parma, CNR-IMM, Bologna, Fisica de la Materia Condensada ETSII Universidad de Valladolid, Spain (literal)
- Titolo
- Strain evaluation in SiC MEMS test structures (literal)
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