A study of the morphology of 3C-SiC layers grown at different C/Si ratios (Contributo in atti di convegno)

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  • A study of the morphology of 3C-SiC layers grown at different C/Si ratios (Contributo in atti di convegno) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Alternative label
  • Attolini G.; Watts B. E.; Bosi M.; Rossi F.; Riesz F. (2009)
    A study of the morphology of 3C-SiC layers grown at different C/Si ratios
    in Euro CVD 17/ CVD 17, Vienna
    (literal)
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  • Attolini G.; Watts B. E.; Bosi M.; Rossi F.; Riesz F. (literal)
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  • In: Euro CVD 17/ CVD 17 - Euro CVD 17/ CVD 17 (Vienna, 04-09/10 2009). Proceedings, vol. 25 (3) pp. 397 - 401. (ECS Transactions, vol. 25 (3)). ECS Transactions, 2009. (literal)
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  • ABSTRACT: A comparative study of the morphology of 3C-SiC films prepared with different C:Si ratios is presented. The silane precursor controls the growth rate at all values of C:Si ratio but combined observations using Atomic Force Microscopy and Scanning Electron Microscopy indicate that the C:Si ratio is critical in determining the grain size and faceting at C:Si values close to 1. Makyoh topography reveals various surface defects, a slight mesoscale roughness and bending of the epiwafers. (literal)
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  • CNR-IMEM, Parma, Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, H-1525 BUDAPEST (Hungary) (literal)
Titolo
  • A study of the morphology of 3C-SiC layers grown at different C/Si ratios (literal)
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