Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology (Contributo in atti di convegno)

Type
Label
  • Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology (Contributo in atti di convegno) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • P.Romanini, M. Peroni, C. Lanzieri, A. Cetronio, M. Calori A. Passaseo, B. Potì, A. Chini, L. Mariucci, A. Di Gaspare, V. Teppati, V. Camarchia (2006)
    Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology
    in Proceedings of European Microwave Week, Manchester
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • P.Romanini, M. Peroni, C. Lanzieri, A. Cetronio, M. Calori A. Passaseo, B. Potì, A. Chini, L. Mariucci, A. Di Gaspare, V. Teppati, V. Camarchia (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • 10-15 September 2006, Manchester (UK) (literal)
Note
  • Scopus (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Selex Sistemi Integrati S.p.A., Engineering Division, Via Tiburtina, Km 12,400, 00131 Roma, Italy b National Nanotechnology Laboratories, CNR-INFM, via per Arnesano, 73100 Lecce, Italy c Dipartimento di Ingegneria deh'Informazione, Universita di Modena e Reggio Emilia, Via Vignolese 905, 41100 Modena, Italy d CNR, Istituto di Fotonica e Nanotecnologie, Via Cineto Romano 42, 00156 Roma, Italy e Politecnico di Torino, Department of Electronics, Corso Duca degli Abruzzi 24, 10129 Torino, Italy (literal)
Titolo
  • Very High Performance GaN HEMT devices by Optimized Buffer and Field Plate Technology (literal)
Abstract
  • ne of the main expected benefits of AlGaN HEMT technology for microwave applications is related to the higher operating bias voltage achievable with these devices. However, various technological issues, concerning material properties and device technology must be properly tailored to fully exploit the potential of that kind of devices. In this work we report on the realization of HEMT device showing improved performance in terms of breakdown voltage, device isolation and reverse current leakage achieved by improved epilayer buffer properties and optimized Field Plate gate geometry. In particular the low defect density and the high resistivity obtained by using an HT-AlN crystallization layer for the growth of the GaN layer has lead to an effective 2DEG carrier concentration of 8×10 12 cm -2 with related mobility of 1700cm 2/Vs and corresponding devices with a very high voltage breakdown (V B>200V), excellent active device isolation and limited reverse current leakage. (literal)
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