Attempts to deposit Nb3Sn by MOCVD (Abstract/Poster in atti di convegno)

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  • Attempts to deposit Nb3Sn by MOCVD (Abstract/Poster in atti di convegno) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Carta,G.; Crociani, L.; Rossetto, G.; Gerbasi, R.; Palmieri V. (2006)
    Attempts to deposit Nb3Sn by MOCVD
    in SAMIC 2006. Syntheses and methodologies in inorganic chemistry: From molecules to nanosystems, Bressanone, 3-7 dicembre 2006
    (literal)
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  • Carta,G.; Crociani, L.; Rossetto, G.; Gerbasi, R.; Palmieri V. (literal)
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  • The technique opens a new research path in the field of thin films for coating large area and tricky shapes such as a superconductingcavity. (literal)
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  • Nb3Sn is a superconductor that bas been object of great interest for its applications to su erconducting magnets, and is a promising candidate for superconductingcavities. Nb3Sn is usually obtained by thermal diffusion of Nb and Sn multilayers or,in thin films, by physical sputtering methods. In this case we used the MOCVD (Metal Organic Chemical Vapor Deposition) technique which presents the advantage to cover also complex shape surfaces in a more economic way. Several cyclopentadienyl and methyl-cyclopentadienylniobium precursors with methyl and boroydride ligands have been synthetized and characterixd in order to choose those which present the highest volatility. In particular, bis(cycIopentadieny1)niobjum borohydride [Cp2NbB&] and (cyclopentadieny1)niobium tetramethyl [CpNbMe4] have shown to be the compounds with the best properties to obtain thin films fiom vapor phase. For the growth of tin the used precursor was the tributyltin hydride [Bu3SnH]. (literal)
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  • Here we report on preliminary results of CO-deposition experiments performed on (001) silicon, cooper and glass, as substrates, at 55O°C for 45 min using a horizontal hot Wall reactor operating at a pressure of 3 mbar. The source temperatures were 80 and 70°C for CpNbMe4 and BySnH, respectively. Both the carrier gas, flowing through the bubblers containing the precursors (10 scc/min for Sn, 60 scc/min for Nb) and the coreactant and the coreactant gas (250 scclmin), introduced in the vicinity of the reactor chamber, was a mixture of nitrogen-hydrogen(H2=25%). (literal)
Note
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  • 1-4 ICIS, CNR, Padova 5 INFN Legnaro (literal)
Titolo
  • Attempts to deposit Nb3Sn by MOCVD (literal)
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