MOCVD growth and characterization of cobalt phosphide thin films on InP substrates (Contributo in atti di convegno)

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  • MOCVD growth and characterization of cobalt phosphide thin films on InP substrates (Contributo in atti di convegno) (literal)
Anno
  • 2003-01-01T00:00:00+01:00 (literal)
Alternative label
  • Barreca D. 1, Camporese A. 2, Casarin M. 3, El Habra N. 4, Gasparotto A. 5, Natali M. 6, Rossetto G. 7, Tondello E. 8, Zanella P. 9. (2003)
    MOCVD growth and characterization of cobalt phosphide thin films on InP substrates
    in Chemical vapor deposition XVI and EUROCVD 14, Parigi
    (literal)
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  • Barreca D. 1, Camporese A. 2, Casarin M. 3, El Habra N. 4, Gasparotto A. 5, Natali M. 6, Rossetto G. 7, Tondello E. 8, Zanella P. 9. (literal)
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  • Cobalt phosphide thin films were grown by MOCVD (Metal-Organic ChemicalVapor Deposition) in H2 atmospheres on (001) InP substrates using bis(h5-methylcyclopentadienyl)Co(II) (Co(CpMe)2) - synthesized in our lab- and phophine (PH3) precursors at 550°C. Film microstructure, composition and morphology were investigated in detail by XRD (X-ray Diffraction), XPS (X-ray Photoelectron Spectroscopy), Rutherford Backscattering (RBS) and AFM (Atomic Force Microscopy). Films were crystalline and consisted mainly of the orthorhombic CoP phase and some amount of CoP2 phase. XPS measurements indicate an oxidation state (III) for Co, while the P/Co ratio was found by RBS to lie in the range 1-2. The coatings were highly textured with (202), (103) CoP and (-311) CoP2 crystal planes parallel to the substrate surface. The root mean square surface roughness was below 10 Å for thickness smaller than 20 nm and increased to a maxiumum of 70 Å for a 35 nm thick film. Cobalt and In intermixing is investigated by XPS depth profiles. (literal)
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  • 2,4,6,7,9 ICIS – CNR, 1,3,5,8 ISTM - CNR, Sezione di Padova e UNI-PD (literal)
Titolo
  • MOCVD growth and characterization of cobalt phosphide thin films on InP substrates (literal)
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