MOCVD of gallium oxide thin films using homoleptic gallium complexes: precursor evaluation and thin film characterisation (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• MOCVD of gallium oxide thin films using homoleptic gallium complexes: precursor evaluation and thin film characterisation (Articolo in rivista) (literal)

Anno

• 2009-01-01T00:00:00+01:00 (literal)

Alternative label

• M. Hellwig, K. Xu, D. Barreca, A. Gasparotto, B. Niermann, J. Winter, H.W. Becker, D. Rogalla, R.A. Fischer, A. Devi (2009)
  MOCVD of gallium oxide thin films using homoleptic gallium complexes: precursor evaluation and thin film characterisation
  in ECS transactions
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Hellwig, K. Xu, D. Barreca, A. Gasparotto, B. Niermann, J. Winter, H.W. Becker, D. Rogalla, R.A. Fischer, A. Devi (literal)

Pagina inizio

• 617 (literal)

Pagina fine

• 624 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 25 (literal)

Rivista

• ECS transactions (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note

• DOI: 10.1149/1.3207648 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 8 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1,2,9,10: Inorganic Chemistry II, Ruhr-University Bochum, 44801 Bochum, Germany 3: CNR-ISTM and INSTM, Department of Chemistry, Padova University, 35131 Padova, Italy 4: Department of Chemistry, Padova University and INSTM, 35131 Padova, Italy 5,6: Experimental Physics II, Ruhr-University Bochum, 44801 Bochum, Germany 7,8: Dynamitron-Tandem-Laboratory (DTL) of RUBION, Ruhr-University Bochum, 44801 Bochum,Germany (literal)

Titolo

• MOCVD of gallium oxide thin films using homoleptic gallium complexes: precursor evaluation and thin film characterisation (literal)

Abstract

• This work is focused on the evaluation of different Ga(III) precursor (conventional acetylacetonates, malonates and amides) for the MOCVD of Ga2O3 thin films. In particular, the attention is devoted to a thorough comparison of the precursor qualifying properties (volatility, thermal stability under the vaporization conditions) and their interrelations with the features of the obtained deposits. Samples were grown by thermal CVD and characterized by means of a multi-technique approach (X-ray diffraction {XRD}, scanning electron microscopy {SEM}, atomic force microscopy {AFM}, energy dispersive X-ray spectroscopy {EDXS}, X-ray photoelectron spectroscopy {XPS}, Rutherford backscattering spectrometry {RBS}, spectroscopic ellipsometry {SE}) to elucidate their microstructure, morphology and chemical composition, as well as their mutual interrelations with the synthesis conditions. (literal)

Prodotto di

• Progettazione molecolare di nanosistemi organizzati (PM.P05.007.001) (Modulo)
• Institute of molecular science and technologies (ISTM) (Istituto)

Autore CNR

• DAVIDE BARRECA (Unità di personale interno)

Incoming links:

Prodotto

• Institute of molecular science and technologies (ISTM) (Istituto)
• Progettazione molecolare di nanosistemi organizzati (PM.P05.007.001) (Modulo)

Autore CNR di

• DAVIDE BARRECA (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• ECS transactions (Rivista)