Crossed Andreev reflection-induced magnetoresistance (Articolo in rivista)

Type
Label
  • Crossed Andreev reflection-induced magnetoresistance (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Giazotto, F; Taddei, F; Beltram, F; Fazio, R (2006)
    Crossed Andreev reflection-induced magnetoresistance
    in Physical review letters (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Giazotto, F; Taddei, F; Beltram, F; Fazio, R (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 97 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR, INFM, NEST, I-56126 Pisa, Italy; Scuola Normale Super Pisa, I-56126 Pisa, Italy; Scuola Int Super Studi Avanzati, SISSA, I-34014 Trieste, Italy (literal)
Titolo
  • Crossed Andreev reflection-induced magnetoresistance (literal)
Abstract
  • We show that very large negative magnetoresistance can be obtained in magnetic trilayers in a current-in-plane geometry owing to the existence of crossed Andreev reflection. This spin valve consists of a thin superconducting film sandwiched between two ferromagnetic layers whose magnetization is allowed to be either parallelly or antiparallelly aligned. For a suitable choice of structure parameters and nearly fully spin-polarized ferromagnets, the magnetoresistance can exceed -80%. Our results are relevant for the design and implementation of spintronic devices exploiting ferromagnet-superconductor structures. (literal)
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