Nanometer-scale spatial inhomogeneities of the chemical and electronic properties of an ion implanted Mn-Ge alloy (Articolo in rivista)

Type
Label
  • Nanometer-scale spatial inhomogeneities of the chemical and electronic properties of an ion implanted Mn-Ge alloy (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.susc.2006.07.042 (literal)
Alternative label
  • Ottaviano, L; Parisse, P; Passacantando, M; Picozzi, S; Verna, A; Impellizzeri, G; Priolo, F (2006)
    Nanometer-scale spatial inhomogeneities of the chemical and electronic properties of an ion implanted Mn-Ge alloy
    in Surface science
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Ottaviano, L; Parisse, P; Passacantando, M; Picozzi, S; Verna, A; Impellizzeri, G; Priolo, F (literal)
Pagina inizio
  • 4723 (literal)
Pagina fine
  • 4727 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 600 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Aquila, CNR, INFM, I-67010 Coppito, Laquila, Italy; Univ Aquila, Dipartimento Fis, I-67010 Coppito, Laquila, Italy; Univ Catania, INFM, CNR, MATIS, I-95123 Catania, Italy; Univ Catania, Dipartimento Fis, I-95123 Catania, Italy (literal)
Titolo
  • Nanometer-scale spatial inhomogeneities of the chemical and electronic properties of an ion implanted Mn-Ge alloy (literal)
Abstract
  • Electron energy loss spectroscopy maps using a transmission electron microscope were used to investigate with nanometer spatial resolution the Mn distribution of a MnxGe1-x ion implanted alloy (x similar or equal to 4%). Mn is fully diluted in the Ge matrix in a subsurface implanted layer, showing concentration inhomogeneities at the nm scale. In the deep implanted layers the presence of Mn rich clusters-either amorphous or in the Mn5Ge3 phase-is directly evidenced. Scanning Tunneling Microscopy/Spectroscopy directly shows that the Mn5Ge3 clusters are metallic, while those smaller and amorphous are semiconducting with 0.45 +/- 0.05 eV band gap. The Ge matrix with Mn dilution is semiconducting with 0.60 +/- 0.05 eV gap. Electronic structure results are compared with ab-initio calculations. (c) 2006 Elsevier B.V. All rights reserved. (literal)
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