Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy (Articolo in rivista) (literal)

Anno

• 2007-01-01T00:00:00+01:00 (literal)

Alternative label

• Giannazzo F, Roccaforte F, Liotta SF, Raineri V (2007)
  Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy
  in Materials science forum
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Giannazzo F, Roccaforte F, Liotta SF, Raineri V (literal)

Pagina inizio

• 545 (literal)

Pagina fine

• 548 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 556-557 (literal)

Rivista

• Materials science forum (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• CNR, IMM, Sez Catania, Stradale Primosole 50, I-95121 Catania, Italy. (literal)

Titolo

• Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy (literal)

Abstract

• We present a novel approach based on conductive atomic force microscopy (c-AFM) for nano-scale mapping of the Schottky barrier height (SBR) between a semiconductor and an ultrathin (1-5 nm) metal film. The method was applied to characterize the uniformity of the Au/4H-SiC Schottky contact, which is attractive for applications due to the high reported (similar to 1.8 eV) SBH value. Since this system is very sensitive to the SiC surface preparation, we investigated the effect on the nano-scale SBH distribution of a similar to 2 run thick not uniform SiO2 layer. The macroscopic IN characteristics on Au/SiC and Au/not uniform SiO2/SiC diodes showed that the interfacial oxide lowers the average SBH. The c-AFM investigation is carried out collecting arrays of IN curves for different tip positions on 1 mu mx1 mu m area. From these curves, 2D SBH maps are obtained with 1020 nm spatial resolution and energy resolution < 0.1 eV. The laterally inhomogeneous character of the Au/SiC contact is demonstrated. In fact, a SBH distribution peaked at 1.8 eV and with tails from 1.6 eV to 2.1 eV is obtained. Moreover, in the presence of the not uniform oxide at the interface, the SBH distribution exhibits a 0.3 eV peak lowering and a broadening (tails from 1.1 eV to 2.1 eV). (literal)

Prodotto di

• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• FILIPPO GIANNAZZO (Persona)
• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)

Insieme di parole chiave

• Parole chiave di "Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• FABRIZIO ROCCAFORTE (Persona)
• VITO RAINERI (Persona)
• FILIPPO GIANNAZZO (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Nanotecnologie e tecnologie avanzate per elettronica integrata (MD.P05.003.004) (Modulo)
• Semiconduttori innovativi per elettronica di potenza ed Rf (MD.P05.003.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials science forum (Rivista)

Insieme di parole chiave di

• Parole chiave di "Two Dimensional Imaging of the Laterally Inhomogeneous Au/4H-SiC Schottky Barrier by Conductive Atomic Force Microscopy" (Insieme di parole chiave)