Buried nano - Structured layers in high temperature - Pressure treated Si : He (Articolo in rivista)

Type
Label
  • Buried nano - Structured layers in high temperature - Pressure treated Si : He (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Misiuk A, Surma B, Bak-Misiuk J, Raineri V (2006)
    Buried nano - Structured layers in high temperature - Pressure treated Si : He
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Misiuk A, Surma B, Bak-Misiuk J, Raineri V (literal)
Pagina inizio
  • 285 (literal)
Pagina fine
  • 290 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 114 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Inst Electr Mat Technol, PL-02668 Warsaw, Poland; Inst Elect Mat Technol, PL-01919 Warsaw, Poland; Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland; CNR-IMM, I-95121 Catania, Italy (literal)
Titolo
  • Buried nano - Structured layers in high temperature - Pressure treated Si : He (literal)
Abstract
  • The effect of treatment at up to 1400 K (HT) under enhanced hydrostatic pressure (UP, up to 1.2 GPa) on helium implanted single crystalline silicon (Si:He, He ion dose up to 6x10(17) cm(-2), energy up to 300 keV) has been investigated by transmission electron microscopy, secondary ion mass spectrometry, photoluminescence and X-Ray methods. The treatment of Si:He at <= 920 K - HP results in a formation of buried nano-structured layers containing helium filled cavities/bubbles and numerous extended defects; many less dislocations are created at >= 1270 K in Si:He treated under HP. HP affects the recrystallization of amorphous Si, diffusivity of implanted He and of implantation-induced defects and thus promotes the creation of more but smaller He-filled cavities/bubbles as well as other defects near the range of implanted He+. (literal)
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