Pressure sensing by flexible, organic, field effect transistors (Articolo in rivista)

Type
Label
  • Pressure sensing by flexible, organic, field effect transistors (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Manunza, I; Sulis, A; Bonfiglio, A (2006)
    Pressure sensing by flexible, organic, field effect transistors
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Manunza, I; Sulis, A; Bonfiglio, A (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 89 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Cagliari, CNISM, I-09123 Cagliari, Italy; Univ Cagliari, Dept Elect & Elect Engn, I-09123 Cagliari, Italy; INFM, CNR, I-41100 Modena, Italy (literal)
Titolo
  • Pressure sensing by flexible, organic, field effect transistors (literal)
Abstract
  • A mechanical sensor based on a pentacene field effect transistor has been fabricated. The pressure dependence of the output current has been investigated by applying a mechanical stimulus by means of a pressurized air flow. Experimental results show a reversible current dependence on pressure. Data analysis suggests that variations of threshold voltage, mobility and contact resistance are responsible for current variations. Thanks to the flexibility of the substrate and the low cost of the technology, this device opens the way for flexible mechanical sensors that can be used in a variety of innovative applications such as e-textiles and robotic interfaces. (c) 2006 American Institute of Physics. (literal)
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