A fully integrated GaAs-based three-axis Hall magnetic sensor exploiting self-positioned strain released structures (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• A fully integrated GaAs-based three-axis Hall magnetic sensor exploiting self-positioned strain released structures (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0960-1317/20/10/105013 (literal)

Alternative label

• Todaro M.T., L. Sileo, G. Epifani, V. Tasco, R. Cingolani, M. De Vittorio and A. Passaseo (2010)
  A fully integrated GaAs-based three-axis Hall magnetic sensor exploiting self-positioned strain released structures
  in Journal of micromechanics and microengineering (Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Todaro M.T., L. Sileo, G. Epifani, V. Tasco, R. Cingolani, M. De Vittorio and A. Passaseo (literal)

Pagina inizio

• 105013 (literal)

Pagina fine

• 105018 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 20 (literal)

Rivista

• Journal of micromechanics and microengineering (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CNR, Ist Nanosci, Natl Nanotechnol Lab, Dist Tecnol ISUFI, I-73100 Lecce, Italy (Todaro M.T., L. Sileo, G. Epifani, V. Tasco, R. Cingolani, M. De Vittorio and A. Passaseo) (literal)

Titolo

• A fully integrated GaAs-based three-axis Hall magnetic sensor exploiting self-positioned strain released structures (literal)

Abstract

• In this work, we demonstrate a fully integrated three-axis Hall magnetic sensor by exploiting microfabrication technologies applied to a GaAs-based heterostructure. This allows us to obtain, by the same process, three mutually orthogonal sensors: an in-plane Hall sensor and two out-of-plane Hall sensors. The micromachined devices consist of a two-dimensional electron gas AlGaAs/InGaAs/GaAs multilayer which represents the sensing structure, grown on the top of an InGaAs/GaAs strained bilayer. After the release from the substrate, the strained bilayer acts as a hinge for the multilayered structure allowing the out-of-plane self-positioning of devices. Both the in-plane and out-of-plane Hall sensors show a linear response versus the magnetic field with a sensitivity for current-biased devices higher than 1000 V A-1 T-1, corresponding to an absolute sensitivity more than 0.05 V T-1 at 50 ?A. Moreover, Hall voltage measurements, as a function of the mechanical angle for both in-plane and out-of-plane sensors, demonstrate the potential of such a device for measurements of the three vector components of a magnetic field. (literal)

Prodotto di

• Nanotecnologie applicate a semiconduttori, ossidi e isolanti (MD.P06.028.002) (Modulo)

Autore CNR

• ROBERTO CINGOLANI (Unità di personale esterno)
• GIANMICHELE EPIFANI (Unità di personale interno)
• ADRIANA GRAZIA PASSASEO (Unità di personale interno)
• VITTORIANNA TASCO (Persona)
• MASSIMO DE VITTORIO (Persona)
• MARIA TERESA TODARO (Unità di personale interno)

Insieme di parole chiave

• Keywords of "A fully integrated GaAs-based three-axis Hall magnetic sensor exploiting self-positioned strain released structures" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ADRIANA GRAZIA PASSASEO (Unità di personale interno)
• MARIA TERESA TODARO (Unità di personale interno)
• GIANMICHELE EPIFANI (Unità di personale interno)
• ROBERTO CINGOLANI (Unità di personale esterno)
• MASSIMO DE VITTORIO (Persona)
• VITTORIANNA TASCO (Persona)

Prodotto

• Nanotecnologie applicate a semiconduttori, ossidi e isolanti (MD.P06.028.002) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Journal of micromechanics and microengineering (Rivista)

Insieme di parole chiave di

• Keywords of "A fully integrated GaAs-based three-axis Hall magnetic sensor exploiting self-positioned strain released structures" (Insieme di parole chiave)