http://www.cnr.it/ontology/cnr/individuo/prodotto/ID58368
Interplay between Static and Dynamic Properties of Semifluxons in YBa2Cu3O7-delta 0-pi Josephson Junctions (Articolo in rivista)
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- Interplay between Static and Dynamic Properties of Semifluxons in YBa2Cu3O7-delta 0-pi Josephson Junctions (Articolo in rivista) (literal)
- Anno
- 2010-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1103/PhysRevLett.104.177003 (literal)
- Alternative label
Cedergren, K; Kirtley, JR; Bauch, T; Rotoli, G; Troeman, A; Hilgenkamp, H; Tafuri, F; Lombardi, F (2010)
Interplay between Static and Dynamic Properties of Semifluxons in YBa2Cu3O7-delta 0-pi Josephson Junctions
in Physical review letters (Print); The American Physical Society, Ridge, NY (Stati Uniti d'America)
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Cedergren, K; Kirtley, JR; Bauch, T; Rotoli, G; Troeman, A; Hilgenkamp, H; Tafuri, F; Lombardi, F (literal)
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- Quantum Device Physics Laboratory, Department of Microtechnology and Nanoscience, Chalmers University of Technology,
SE-412 96 Go¨teborg, Sweden
Center for Probing the Nanoscale, Stanford University, Stanford, California 94304, USA
CNISM and DIMEG, Universita` di L'Aquila, Localita` Monteluco, 67040 L'Aquila, Italy
Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente,
Post Office Box 217, 7500 AE Enschede, The Netherlands
Dipartimento Ingegneria dell'Informazione, Seconda Universita` di Napoli e CNR-SPIN, Aversa (CE), Italy (literal)
- Titolo
- Interplay between Static and Dynamic Properties of Semifluxons in YBa2Cu3O7-delta 0-pi Josephson Junctions (literal)
- Abstract
- We have investigated the static and dynamic properties of long YBa2Cu3O7?? 0-? Josephson junctions
and compared them with those of conventional 0 junctions. Scanning SQUID microscope imaging has
revealed the presence of a semifluxon at the phase discontinuity point in 0-? Josephson junctions. Zero
field steps have been detected in the current-voltage characteristics of all junctions. Comparison with
simulation allows us to attribute these steps to fluxons traveling in the junction for conventional 0
junctions and to fluxon-semifluxon interactions in the case of 0-? Josephson junctions. (literal)
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