Electrical properties and memory effects of field-effect transistors from networks of single- and double-walled carbon nanotubes (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Electrical properties and memory effects of field-effect transistors from networks of single- and double-walled carbon nanotubes (Articolo in rivista) (literal)

Anno

• 2010-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1088/0957-4484/21/11/115204 (literal)

Alternative label

• Di Bartolomeo, A; Rinzan, M; Boyd, AK; Yang, YF; Guadagno, L; Giubileo, F; Barbara, P (2010)
  Electrical properties and memory effects of field-effect transistors from networks of single- and double-walled carbon nanotubes
  in Nanotechnology (Bristol. Print)
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Di Bartolomeo, A; Rinzan, M; Boyd, AK; Yang, YF; Guadagno, L; Giubileo, F; Barbara, P (literal)

Pagina inizio

• 115204 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 21 (literal)

Rivista

• Nanotechnology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 9 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1 Dipartimento di Fisica 'E R Caianiello' and Centro Interdipartimentale di Ricerca NANOMATES, Universit`a di Salerno, 84084 Fisciano (Sa), Italy 2 Physics Department, Georgetown University, Washington, DC 20057-1228, USA 3 Dipartimento di Ingegneria Chimica e Alimentare, Universit`a di Salerno, 84084 Fisciano (Sa), Italy 4 CNR-SPIN Salerno, 84084 Fisciano (Sa), Italy (literal)

Titolo

• Electrical properties and memory effects of field-effect transistors from networks of single- and double-walled carbon nanotubes (literal)

Abstract

• We study field-effect transistors made of single- and double-walled carbon nanotube networks for applications as memory devices. The transfer characteristics of the transistors exhibit a reproducible hysteresis which enables their use as nano-sized memory cells with operations faster than 10 ms, endurance longer than 10+4 cycles and charge retention of a few hours in air. We propose water enhanced charge trapping at the SiO2/air interface close to the nanotubes as the dominant mechanism for charge storage. We show that charge storage can be improved by limiting exposure of the device to air. (literal)

Prodotto di

• MD.P04.015.002 Interplay tra superconduttività e magnetismo (MD.P04.015.004) (Modulo)

Autore CNR

• FILIPPO GIUBILEO (Unità di personale interno)

Incoming links:

Autore CNR di

• FILIPPO GIUBILEO (Unità di personale interno)

Prodotto

• MD.P04.015.002 Interplay tra superconduttività e magnetismo (MD.P04.015.004) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Nanotechnology (Rivista)