http://www.cnr.it/ontology/cnr/individuo/prodotto/ID57725
Correlation strength, gaps, and particle-hole asymmetry in high-T[sub c] cuprates: A dynamical mean field study of the three-band copper-oxide model (Articolo in rivista)
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- Correlation strength, gaps, and particle-hole asymmetry in high-T[sub c] cuprates: A dynamical mean field study of the three-band copper-oxide model (Articolo in rivista) (literal)
- Anno
- 2009-01-01T00:00:00+01:00 (literal)
- Alternative label
De' Medici L., Wang X., Capone M., J. Millis A. (2009)
Correlation strength, gaps, and particle-hole asymmetry in high-T[sub c] cuprates: A dynamical mean field study of the three-band copper-oxide model
in Nature physics (Print)
(literal)
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- De' Medici L., Wang X., Capone M., J. Millis A. (literal)
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- American Physical Society. (literal)
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- ISI Web of Science (WOS) (literal)
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- 1) Department of Physics and Center for Materials Theory, RutgersThe State University of New Jersey, 136 Frelinghuysen Road, Piscataway, New Jersey 08854, USA
2) Laboratoire de Physique des Solides, Université Paris-SudCNRS, UMR 8502, F-91405 Orsay Cedex, France
3) Dipartimento di Fisica, Università di Roma La Sapienza, Piazzale Aldo Moro 2, I-00185 Rome, Italy
4) Department of Physics, Columbia University, 538 West 120th Street, New York, New York 10027, USA
5) SMC Center, CNRINFM, Piazzale Aldo Moro 2, I-00185 Rome, Italy
6) ISCCNR, Via dei Taurini 18, I-00185 Rome, Italy (literal)
- Titolo
- Correlation strength, gaps, and particle-hole asymmetry in high-T[sub c] cuprates: A dynamical mean field study of the three-band copper-oxide model (literal)
- Abstract
- The three-band model relevant to high-temperature copper-oxide superconductors is solved using single-site dynamical mean field theory and a tight-binding parametrization of the copper and oxygen bands. For a band filling of one hole per unit cell the metal/charge-transfer-insulator phase diagram is determined. The electron spectral function, optical conductivity, and quasiparticle mass enhancement are computed as functions of electron and hole doping for parameters such that at one hole per cell the paramagnetic phase is insulating and for parameters such that at one hole per unit cell the paramagnetic phase is metallic. The optical conductivity is computed using the Peierls phase approximation for the optical matrix elements. The calculation includes the physics of Zhang-Rice singlets. The effects of antiferromagnetism on the magnitude of the gap and the relation between correlation strength and doping-induced changes in state density are determined. Three-band and one-band models are compared. The two models are found to yield quantitatively consistent results for all energies less than about 4 eV including energies in the vicinity of the charge-transfer gap. Parameters on the insulating side of the metal/charge-transfer insulator phase boundary lead to gaps which are too large and near-gap conductivities which are too small relative to data. The results place the cuprates clearly in the intermediate correlation regime, on the paramagnetic metal side of the metal/charge-transfer insulator phase boundary. (literal)
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