Resonant activation in bistable semiconductor lasers (Articolo in rivista)

Type
Label
  • Resonant activation in bistable semiconductor lasers (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevA.76.023815 (literal)
Alternative label
  • Lepri S.; Giacomelli G.; (2007)
    Resonant activation in bistable semiconductor lasers
    in Physical review. A
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Lepri S.; Giacomelli G.; (literal)
Pagina inizio
  • 023815 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 76 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 8 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Istituto dei Sistemi Complessi, Consiglio Nazionale delle Ricerche, via Madonna del Piano 10, I-50019 Sesto Fiorentino, Italy (literal)
Titolo
  • Resonant activation in bistable semiconductor lasers (literal)
Abstract
  • We theoretically investigate the possibility of observing resonant activation in the hopping dynamics of two-mode semiconductor lasers. We present a series of simulations of a rate-equation model under random and periodic modulation of the bias current. In both cases, for an optimal choice of the modulation time scale, the hopping times between the stable lasing modes attain a minimum. The simulation data are understood by means of an effective one-dimensional Langevin equation with multiplicative fluctuations. Our conclusions apply to both edge-emitting and vertical cavity lasers, thus opening the way to several experimental tests in such optical systems. (literal)
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