Thin polycrystalline diamond for low-energy x-ray detection (Articolo in rivista)

Type
Label
  • Thin polycrystalline diamond for low-energy x-ray detection (Articolo in rivista) (literal)
Anno
  • 2004-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.1813621 (literal)
Alternative label
  • Conte G. (1), Rossi M.C. (1), Salvatori S. (1), Ascarelli P. (2), Trucchi D. (2) (2004)
    Thin polycrystalline diamond for low-energy x-ray detection
    in Journal of applied physics; American Institute Of Physics (AIP), Melville (Stati Uniti d'America)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Conte G. (1), Rossi M.C. (1), Salvatori S. (1), Ascarelli P. (2), Trucchi D. (2) (literal)
Pagina inizio
  • 6415 (literal)
Pagina fine
  • 6420 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 96 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • fasc. (11). American Institute of Physics (AIP). (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 6 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 11 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1) National Institute for the Physics of Matter and Department of Electronic Engineering, University of Rome \"Roma Tre,\" Via della Vasca Navale, 84-00146 Rome, Italy; 2) National Research Council, Institute of Methodology Inorganic and Plasmas, Via Salaria km 29,300 - 00016 Monterotondo Scalo, Rome, Italy; (literal)
Titolo
  • Thin polycrystalline diamond for low-energy x-ray detection (literal)
Abstract
  • The response of polycrystalline diamond detectors to low-energy x-ray beams is presented. Diamond metal?semiconductor?metal vertical structures have been realized to investigate the influence of the electric field in the dark and under x-ray irradiation. Nonlinear contributions to the current, compatible with field-assisted thermal ionization of trapped charges, have been evidenced, as well as the presence of defect-related electronic states acting as traps has been confirmed by subband-gap photoconductivity measurements. Moreover, correlations have been evidenced among irradiation time, variation of the current in the dark, and photoconductive response of the devices to the x-ray beam. An evaluation of the minority-carrier mobility-lifetime ?? product, at the end of the activation process, has led to a value of 9.2×10-7 cm2?V. Two orders of magnitude linear response to the beam intensity variations have been evaluated after removal of the bremsstrahlung radiation contribution on a 43-?m-thick device. (literal)
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