http://www.cnr.it/ontology/cnr/individuo/prodotto/ID55

Lattice strain of B-B pairs formed by He irradiation in crystalline Si1-xBx/Si (Articolo in rivista)

Type

Label

Lattice strain of B-B pairs formed by He irradiation in crystalline Si1-xBx/Si (Articolo in rivista) (literal)

Anno

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

Alternative label

Bisognin, G; De Salvador, D; Napolitani, E; Carnera, A; Romano, L; Piro, AM; Mirabella, S; Grimaldi, MG (2006)
Lattice strain of B-B pairs formed by He irradiation in crystalline Si1-xBx/Si
in Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms (Print); ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS, AMSTERDAM (Paesi Bassi)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Bisognin, G; De Salvador, D; Napolitani, E; Carnera, A; Romano, L; Piro, AM; Mirabella, S; Grimaldi, MG (literal)

Pagina inizio

Pagina fine

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

Rivista

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

Note

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

CNR, INFM, MATIS, I-35131 Padua, Italy; Univ Padua, Dipartimento Fis, I-35131 Padua, Italy; CNR, INFM, MATIS, I-95123 Catania, Italy; Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy (literal)

Titolo

Lattice strain of B-B pairs formed by He irradiation in crystalline Si1-xBx/Si (literal)

Abstract

This work reports on the lattice strain induced by small B clusters in Si produced by He irradiation of an epitaxial layer uniformly doped with substitutional B. By means of high resolution X-ray diffraction measurements and nuclear reaction analysis, lattice strain profiles and B lattice location of the sample before and after He irradiation were extracted, respectively. We found that, as a consequence of He irradiation, all B atoms form B-B pairs, and the tensile strain status of the as-grown B-doped layer lowers by a factor of about 2. Moreover, the volume lattice expansion Delta V per clustered B atom was found to be (-(10.0 +/- 0.6) angstrom(3)). This negative value of AV is very different from the positive one (+(3.7 +/- 0.6) angstrom(3)) found for B clusters created as a consequence of the B interaction with self-interstitials produced by Si implantation and subsequent annealing [G. Bisognin, D. De Salvador, E. Napolitani, A. Carnera, E. Bruno, S. Mirabella, F. Priolo, A. Mattoni, Semicond. Sci. Technol. 21 (2006) L41]. The opposite sign of this volume lattice expansion suggests that a strong correlation exists between the atomistic structures associated with these two types of complexes and the lattice strain that they induce in the Si lattice. (c) 2006 Elsevier B.V. All rights reserved. (literal)

Editore