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Morphological and magnetic properties of Ge/MnxGe1-x/Ge(001)2 x 1 diluted magnetic semiconductor (Articolo in rivista)
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- Morphological and magnetic properties of Ge/MnxGe1-x/Ge(001)2 x 1 diluted magnetic semiconductor (Articolo in rivista) (literal)
- Anno
- 2006-01-01T00:00:00+01:00 (literal)
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De Padova, P; Generosi, A; Paci, B; Albertini, VR; Perfetti, P; Quaresima, C; Olivieri, B; Richter, MC; Heckmann, O; D'Orazio, F; Lucari, F; Hricovini, K (2006)
Morphological and magnetic properties of Ge/MnxGe1-x/Ge(001)2 x 1 diluted magnetic semiconductor
in Surface science
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- De Padova, P; Generosi, A; Paci, B; Albertini, VR; Perfetti, P; Quaresima, C; Olivieri, B; Richter, MC; Heckmann, O; D'Orazio, F; Lucari, F; Hricovini, K (literal)
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- CNR, ISM, I-00133 Rome, Italy; CNR, ISAC, I-00133 Rome, Italy; Univ Cergy Pontoise, LMPS, F-95031 Cergy Pontoise, France; Univ Aquila, Dipartimento Fis, INFM, I-67010 Coppito, Italy (literal)
- Titolo
- Morphological and magnetic properties of Ge/MnxGe1-x/Ge(001)2 x 1 diluted magnetic semiconductor (literal)
- Abstract
- We studied morphological and magnetic properties of Ge/MnxGe1-x/Ge(0 0 1)2 x 1, x = 0.02-0.04. Several MnxGe1-x alloys were grown on Ge(0 0 1)2 x I by molecular beam epitaxy, as a function of substrate temperature and Mn concentration. The samples were characterized in situ by RHEED, and ex situ by energy dispersive X-ray reflectivity (EDXR) and magneto-optical Kerr effect, (MOKE). From RHEED analysis we found an optimal growth temperature T-epi = 523 K to achieve 2D epitaxial MnxGe1-x (x = 0.02-0.04) alloy on a Ge(001) substrate. X-ray reflectivity measurements provided: the film roughness, the MnxGe1-x scattering length density, and the average thickness for all samples. MOKE analysis showed ferromagnetism with Curie temperature T-C = 270 K for samples grown at T-epi = 523 K. (c) 2006 Elsevier B.V. All rights reserved. (literal)
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