X-ray diffraction studies of the structure and orientations of thiophene and fluorenone based molecule (Articolo in rivista)

Type
Label
  • X-ray diffraction studies of the structure and orientations of thiophene and fluorenone based molecule (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.tsf.2006.02.074 (literal)
Alternative label
  • William Porzio, Corresponding author contact information, Mariacecilia Pasini, Silvia Destri, Umberto Giovanella, Philippe Fontaine (2006)
    X-ray diffraction studies of the structure and orientations of thiophene and fluorenone based molecule
    in Thin solid films (Print); Elsevier Sequoia, Lausanne (Svizzera)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • William Porzio, Corresponding author contact information, Mariacecilia Pasini, Silvia Destri, Umberto Giovanella, Philippe Fontaine (literal)
Pagina inizio
  • 334 (literal)
Pagina fine
  • 340 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://ac.els-cdn.com/S0040609006003324/1-s2.0-S0040609006003324-main.pdf?_tid=396e6e74-1a08-11e3-9370-00000aacb361&acdnat=1378811017_656b3dbdafcf361bacc1616621a4143f (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 514 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Porzio W., Pasini M., Destri S. Giovanella U. - Istituto per lo Studio delle Macromolecole del C.N.R., via E. Bassini 15, 20133 Milano, Italy Fontaine P.- Synchrotron SOLEIL, L'Orme des Merisiers Saint Aubin, BP 48 F-91192 Gif sur Yvette, France (literal)
Titolo
  • X-ray diffraction studies of the structure and orientations of thiophene and fluorenone based molecule (literal)
Abstract
  • The crystal structure of a conjugated molecule containing thiophene and fluorenone residues has been determined from powder X-ray diffraction (XRD). Thin films (<40 nm thick) of this molecule, grown in high vacuum (10-5 Pa) onto oxidized silicon substrates, are oriented along with different crystallographic directions. A comparison of XRD in both Grazing Incidence and Bragg–Brentano geometries allowed to perform a quantitative analysis of the various orientations. This approach is generally applicable in the case of multi-oriented films. The results fully account for the poor performance of this molecule in p-type field effect transistor devices. (literal)
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