Mobility anisotropy in langmuir-blodgett deposited poly(3-methoxypentyl-tiophene) based thin film transistors (Articolo in rivista)

Type
Label
  • Mobility anisotropy in langmuir-blodgett deposited poly(3-methoxypentyl-tiophene) based thin film transistors (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1016/j.tsf.2004.07.067 (literal)
Alternative label
  • Natali D., Sampietro M., Franco L., Bolognesi A., Botta C. (2005)
    Mobility anisotropy in langmuir-blodgett deposited poly(3-methoxypentyl-tiophene) based thin film transistors
    in Thin solid films (Print); ELSEVIER SCIENCE, Losanna (Svizzera)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Natali D., Sampietro M., Franco L., Bolognesi A., Botta C. (literal)
Pagina inizio
  • 238 (literal)
Pagina fine
  • 241 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 472 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • A. Bolognesi, C. Botta: ISMAC-CNR D. Natali, M. Sampietro, L. Franco: Poli Milano (literal)
Titolo
  • Mobility anisotropy in langmuir-blodgett deposited poly(3-methoxypentyl-tiophene) based thin film transistors (literal)
Abstract
  • We report on oriented thin films of poly[3-(5-methoxypentyl)-thiophene] (P5OMe) obtained by compressing a monolayer Of P5OMe formed at the air/water interface of a Langmuir trough. By using this film as the active layer of a Thin Film Transistor a mobility anisotropy ratio in the range of 10 was measured, which is an unprecedented result for a Langmuir-Blodgett (LB) film. (literal)
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