A high resolution photoemission study of phenol adsorption on Si (100) 2x1 (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• A high resolution photoemission study of phenol adsorption on Si (100) 2x1 (Articolo in rivista) (literal)

Anno

• 2005-01-01T00:00:00+01:00 (literal)

Alternative label

• M.P. Casaletto, M. Carbone, M.N. Piancastelli, K. Horn, K. Weiss, R. Zanoni (2005)
  A high resolution photoemission study of phenol adsorption on Si (100) 2x1
  in Surface science
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M.P. Casaletto, M. Carbone, M.N. Piancastelli, K. Horn, K. Weiss, R. Zanoni (literal)

Pagina inizio

• 42 (literal)

Pagina fine

• 48 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 582 (literal)

Rivista

• Surface science (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), CNR, Via Ugo La Malfa 153, 90146 Palermo, Italy Dipartimento di Scienze e Tecnologie Chimiche, Universita' Tor Vergata, Roma, Italy Department of Molecular Physics, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Berlin, Germany Dipartimento di Chimica, Universita' di Roma ''La Sapienza'', Roma, Italy (literal)

Titolo

• A high resolution photoemission study of phenol adsorption on Si (100) 2x1 (literal)

Abstract

• The adsorption of a bi-functional organic molecule like phenol on Si(1 00)2 · 1 has been investigated by synchrotron radiation-induced photoemission in the valence band, Si 2p, C 1s and O 1s core-level regions. Experiments have been carried out as a function of phenol exposure at room temperature. Phenol adsorbs on Si(1 00)2 · 1 through a dissociative mechanism at room temperature, interacting with the surface by its alcoholic functionality. The line-shape analysis of Si 2p spectra indicates the formation of Si-O and Si-H bonds, as a consequence of the cleavage of the C-O-H bond and the binding of the fragments (CO- group and H atom) to the Si(1 00)2 · 1 surface dimers. The progressive quenching of the silicon surface dimer atoms and the corresponding intensity increase of the Si-OC and Si-H components have been observed as a function of phenol exposure. The presence of the phenoxide (CO-) group on the silicon surface has been evidenced also by the C 1s spectrum, consisting of two components in a 1:5 intensity ratio, energy splitted by 1.5 eV, which can be assigned to carbon atom linked to oxygen (C-O group) and carbon atoms of the aromatic ring, respectively. (literal)

Prodotto di

• Sintesi e crescita di film e superfici nanostrutturate (PM.P05.004.002) (Modulo)
• Istituto per lo studio dei materiali nanostrutturati (ISMN) (Istituto)

Autore CNR

• MARIA PIA CASALETTO (Persona)

Incoming links:

Prodotto

• Istituto per lo studio dei materiali nanostrutturati (ISMN) (Istituto)
• Sintesi e crescita di film e superfici nanostrutturate (PM.P05.004.002) (Modulo)

Autore CNR di

• MARIA PIA CASALETTO (Persona)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Surface science (Rivista)