http://www.cnr.it/ontology/cnr/individuo/prodotto/ID53256

Influence of substrate temperature on the chemical and microstructural properties of MO-CVD ZrTiO4 thin films (Articolo in rivista)

Type

Label

Influence of substrate temperature on the chemical and microstructural properties of MO-CVD ZrTiO4 thin films (Articolo in rivista) (literal)

Anno

Alternative label

Padeletti G., Cusmà A., Ingo G.M., Santoni A., Loreti S., Minarini C., Viticoli M. (2003)
Influence of substrate temperature on the chemical and microstructural properties of MO-CVD ZrTiO4 thin films
in Applied physics. A, Materials science & processing (Print)
(literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

Padeletti G., Cusmà A., Ingo G.M., Santoni A., Loreti S., Minarini C., Viticoli M. (literal)

Pagina inizio

Pagina fine

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

Rivista

Note

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

Authors 1, 2,3,7: ISMN-CNR, Roma-Montelibretti; Authors 4,5: ENEA Centro Ric. Frascati; Author 6: ENEA Centro Ric. Portici (literal)

Titolo

Influence of substrate temperature on the chemical and microstructural properties of MO-CVD ZrTiO4 thin films (literal)

Abstract

In the last few years, intensive research activity has been focused on the development of suitable synthesis methods for high-permettivity materials, used for the realization of next-generation microdevices able to fulfil the prevision of the Technology Roadmap of Semiconductors. The use of high-permettivity materials can overcome the difficulties concerning the production of SiO2-based ultra-thin dielectrics, such as the generation of pinholes and the non-uniformity of the film, which may result in a malfunction in high-density systems. Recently, zirconium titanate thin films were discovered to have very interesting dielectric properties, which suggest a use for them in microwave integrated systems, such as receivers or DRAMs, since they are monophasic, have little dissipation and show a good thermal stability and a high value for the dielectric constant, independent of frequency in the range from kilohertz to a few gigahertz. Real application is possible only in strict connection with the developmentof a suitable preparation method which allows production with controlled and reproducible characteristics. In this work, the synthesis and characterization of ZrxTi(1-x)O4 (ZT) thin films grown via MO-CVD is described, studying the influence of growth parameters on their structural, chemical and physical properties. (literal)

Prodotto di