Initial nitride formation at Si/3C–SiC(100)3×2 interface by oxynitridation (Articolo in rivista)

Type
Label
  • Initial nitride formation at Si/3C–SiC(100)3×2 interface by oxynitridation (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2130714 (literal)
Alternative label
  • Radtke C.; Enriquez H.; Arnault J.C.; Soukiassian P.; Moras P.; Crotti C.; Perfetti P. (2005)
    Initial nitride formation at Si/3C–SiC(100)3×2 interface by oxynitridation
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Radtke C.; Enriquez H.; Arnault J.C.; Soukiassian P.; Moras P.; Crotti C.; Perfetti P. (literal)
Pagina inizio
  • 193110 (literal)
Pagina fine
  • 193112 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 87 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
  • Google Scholar (literal)
  • Scopus (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • ISM - CNR Commissariat à l'Energie Atomique, Laboratoire SIMA associé à l'Université de Paris-Sud/Orsay (literal)
Titolo
  • Initial nitride formation at Si/3C–SiC(100)3×2 interface by oxynitridation (literal)
Abstract
  • Nitric oxide interaction with 3C–SiC(100)3×2 and Si-3×2/3C–SiC(100)3×2 surfaces is investigated by synchrotron radiation-based core level photoemission spectroscopy. At 25 °C, NO exposures result in oxynitride formation, while annealing at 1000 °C removes oxygen leading to a nitride layer. Most interestingly, the results suggest stoichiometric Si3N4 layer formation at Si-3×2/3C–SiC(100)3×2 interface. This finding is of interest in limiting dopant diffusion and in defect passivation so critical at insulator/SiC interfaces. (literal)
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