http://www.cnr.it/ontology/cnr/individuo/prodotto/ID52023
UHV deposition of titanium bis-phthalocyanine on the GaAsð100Þ-b2-ð2 ? 4Þ and on graphite surface: an STM-UHV study (Articolo in rivista)
- Type
- Label
- UHV deposition of titanium bis-phthalocyanine on the GaAsð100Þ-b2-ð2 ? 4Þ and on graphite surface: an STM-UHV study (Articolo in rivista) (literal)
- Anno
- 2003-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/S0039-6028(03)00604-6 (literal)
- Alternative label
Capobianchi A., Paoletti A.M., Pennesi G., Rossi G., Scavia G. (2003)
UHV deposition of titanium bis-phthalocyanine on the GaAsð100Þ-b2-ð2 ? 4Þ and on graphite surface: an STM-UHV study
in Surface science
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Capobianchi A., Paoletti A.M., Pennesi G., Rossi G., Scavia G. (literal)
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- Pagina fine
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- Rivista
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- Impact factor anno 2002 =2.19 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
- Note
- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- Titolo
- UHV deposition of titanium bis-phthalocyanine on the GaAsð100Þ-b2-ð2 ? 4Þ and on graphite surface: an STM-UHV study (literal)
- Abstract
- An STM-UHV study of the deposition of titanium bis-phthalocyanine under high vacuum (UHV) conditions on two different substrates such as GaAs (100)-beta 2-(2X4)and highly oriented pyrolytic graphite (HOPG) has been carried out. An STM spectroscopic analysis on the local density of states has also been performed .In the case of a GaAs as substrate , the STM images show that the molecules align themselves preferentially along the dimer rows , typical of 2X4 reconstruction , thus revealing the fundamental role of the interaction between the molecule and the reconstructed substrate in orenting the adsorbed molecules . In the case of HOPG the images indicate the formation of irregular channels thus suggesting an auto assembling of the molcules between themselves rather than a strong intraction with the substrate , as in the GAs case. (literal)
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