Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping (Articolo in rivista)

Type
Label
  • Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2362929 (literal)
Alternative label
  • De Seta, M; Capellini, G; Di Gaspare, L; Evangelisti, F; D'Acapito, F (2006)
    Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping
    in Journal of applied physics
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • De Seta, M; Capellini, G; Di Gaspare, L; Evangelisti, F; D'Acapito, F (literal)
Pagina inizio
  • 093516 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 100 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Univ Roma Tre, I-00146 Rome, Italy; European Synchrotron Radiat Facil, CNR, INFM, OGG,GILDA CRG, F-38043 Grenoble, France (literal)
Titolo
  • Freezing shape and composition of Ge/Si(001) self-assembled islands during silicon capping (literal)
Abstract
  • We use atomic force microscopy, x-ray photoemission spectroscopy, and x-ray absorption spectroscopy to study the effect of the deposition of a Si cap layer by chemical vapor deposition on the morphology and composition of a Ge island layer grown at 600 degrees C. We found that the capping of self-assembled Ge islands under a silicon layer results in high-quality, atomically flat layer only at deposition temperature above 700 degrees C. On the other hand at this temperature Ge-Si intermixing and island coarsening are greatly enhanced, resulting in an increased average island volume. Here we show that the predeposition at low temperature of a thin cap layer preserves island shape, size, and composition when the capped islands undergo a subsequent process at higher temperature up to 750 degrees C. It is shown, therefore, that with a two-step capping process it is possible to combine the benefit of a low temperature capping, which reduces island alloying and coarsening, with that of a high temperature capping which is needed to recover a flat surface. (c) 2006 American Institute of Physics. (literal)
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