Theoretical imaging of current profiles in two-dimensional devices (Articolo in rivista)

Type
Label
  • Theoretical imaging of current profiles in two-dimensional devices (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Alternative label
  • Cresti, A; Grosso, G; Parravicini, GP (2006)
    Theoretical imaging of current profiles in two-dimensional devices
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Cresti, A; Grosso, G; Parravicini, GP (literal)
Pagina inizio
  • 537 (literal)
Pagina fine
  • 549 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 53 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • Scuola Normale Super Pisa, NEST INFM, I-56126 Pisa, Italy; Univ Pisa, Dipartimento Fis E Fermi, I-56127 Pisa, Italy; NEST INFM, I-56127 Pisa, Italy; NEST INFM, I-27100 Pavia, Italy; Univ Pavia, Dipartimento Fis A Volta, I-27100 Pavia, Italy (literal)
Titolo
  • Theoretical imaging of current profiles in two-dimensional devices (literal)
Abstract
  • This paper addresses in a concise and rigorous way the basic tools for the study of local longitudinal and transverse microscopic currents in two-dimensional devices. The emphasis is on the optimized use of the Keldysh nonequilibrium Green's function theory together with the tight-binding representation of the electronic system. We elaborate general analytic expressions of current profiles, useful for modeling and simulating the local site-to-site flow of carriers; furthermore, in broken time-reversal symmetry, the formalism discerns unambiguously persistent and transport contributions to the bond currents. Our approach achieves a workable theoretical imaging, resolved in space and energy, of the microscopic currents through mesoscopic devices. (literal)
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