Growth and Characterization of Ti-Ta-O Thin Films on Si Substrates by Liquid Injection MOCVD for High-k Applications from Modified Titanium and Tantalum Precursors (Articolo in rivista)

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  • Growth and Characterization of Ti-Ta-O Thin Films on Si Substrates by Liquid Injection MOCVD for High-k Applications from Modified Titanium and Tantalum Precursors (Articolo in rivista) (literal)
Anno
  • 2010-01-01T00:00:00+01:00 (literal)
Alternative label
  • A. Devi, M. Hellwig, D. Barreca, H. Parala, R. Thomas, H.-W. Becker, R.S. Katiyar, R.A Fischer, E. Tondello (2010)
    Growth and Characterization of Ti-Ta-O Thin Films on Si Substrates by Liquid Injection MOCVD for High-k Applications from Modified Titanium and Tantalum Precursors
    in Chemical vapor deposition (Print)
    (literal)
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  • A. Devi, M. Hellwig, D. Barreca, H. Parala, R. Thomas, H.-W. Becker, R.S. Katiyar, R.A Fischer, E. Tondello (literal)
Pagina inizio
  • 157 (literal)
Pagina fine
  • 165 (literal)
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  • 16 (literal)
Rivista
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  • DOI: 10.1002/cvde.200906813 (literal)
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  • 9 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • 1,2,4,8: Inorganic Materials Chemistry, Lehrstuhl fur Anorganische Chemie II, Ruhr-University Bochum, Universitatsstr. 150, D-44780, Bochum (Germany) 3: ISTM-CNR, INSTM, Department of Chemistry, Padova University, Via Marzolo 1, I-35131 Padova (Italy) 5,7: Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, P.O. Box 23343, San Juan, PR 00931-3343 (USA) 6: Dynamitron Tandem Laboratory, Ruhr-University Bochum, Univeresitatsstr. 150, D-44780, Bochum (Germany) 9: Department of Chemistry, Padova University, Via Marzolo 1, I-35131 Padova (Italy) (literal)
Titolo
  • Growth and Characterization of Ti-Ta-O Thin Films on Si Substrates by Liquid Injection MOCVD for High-k Applications from Modified Titanium and Tantalum Precursors (literal)
Abstract
  • Titanium oxide (TiO2) and titanium-tantalum oxide (Ti-Ta-O) thin films are deposited by liquid injection (LI) metal-organic (MO) CVD using metal amide-malonate complexes, [Ti(NR2)2(dbml)2], and tantalum, [Ta(NMe2)4(dbml)] (R = Me, Et; dbml = di-tert-butylmalonato). TiO2 and Ti-Ta-O films are deposited on Si(100) in the temperature ranges 350-–650 °C and 500–700 °C, respectively. The structure, morphology, and chemical composition of the films are evaluated by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Rutherford backscattering spectroscopy (RBS), and X-ray photoelectron spectroscopy (XPS). The electrical properties of the films, namely the dielectric properties, are assessed by carrying out capacitance-voltage (C-V) measurements on metal-oxide-semiconductor (MOS) capacitor structures. (literal)
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