Hafnium carbamates and ureates: new class of precursors for low-temperature growth of HfO2 thin films (Articolo in rivista)

Type
Label
  • Hafnium carbamates and ureates: new class of precursors for low-temperature growth of HfO2 thin films (Articolo in rivista) (literal)
Anno
  • 2009-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1039/b821128k (literal)
Alternative label
  • a- Pothiraja, R.; a- Milanov, A. P.; b- Barreca, D.; c- Gasparotto, A.; d- Becker, H.-W.; a- Winter, M.; a- Fischer, R. A.; a- Devi, A. (2009)
    Hafnium carbamates and ureates: new class of precursors for low-temperature growth of HfO2 thin films
    in Chemical communications (Lond., 1996, Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • a- Pothiraja, R.; a- Milanov, A. P.; b- Barreca, D.; c- Gasparotto, A.; d- Becker, H.-W.; a- Winter, M.; a- Fischer, R. A.; a- Devi, A. (literal)
Pagina inizio
  • 1978 (literal)
Pagina fine
  • 1980 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • articolo con autori stranieri (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://pubs.rsc.org/en/Content/ArticleLanding/2009/CC/b821128k (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#note
  • DOI: 10.1039/b821128k (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo
  • 15 (literal)
Note
  • Scopu (literal)
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1,2,6,7,8 : Lehrstuhl fur Anorganische Chemie II, Inorganic Materials Chemistry Group, Ruhr-University Bochum, D-44780 Bochum, Germany 3 : ISTM-CNR and INSTM, 35131 Padova, Italy 4 : Department of Chemistry, Padova University and INSTM, 35131 Padova, Italy 5 : Lehrstuhl fur Experimentalphysik III, Ruhr-University Bochum, D-44780 Bochum, Germany (literal)
Titolo
  • Hafnium carbamates and ureates: new class of precursors for low-temperature growth of HfO2 thin films (literal)
Abstract
  • Novel volatile compounds of hafnium, namely tetrakis-N,Odialkylcarbamato hafnium(IV) [Hf(iPrNC(O)OiPr)4] (1) and tetrakis-N,N,N'-trialkylureato hafnium(IV) [Hf(iPrNC(O)N- (Me)Et)4] (2), have been synthesized through the simple insertion reaction of isopropyl isocyanate into hafnium isopropoxide and hafnium ethylmethylamide, respectively; based on the promising thermal properties, compound 1 has been evaluated as a precursor for metalorganic chemical vapor deposition (MOCVD) of HfO2 thin films, which resulted in the growth of stoichiometric and crystalline layers with a uniform morphology at temperature as low as 250°C. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Prodotto
Autore CNR di
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it