Low-temperature growth of HfO2 dielectric layers by Plasma-Enhanced CVD (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Low-temperature growth of HfO2 dielectric layers by Plasma-Enhanced CVD (Articolo in rivista) (literal)

Anno

• 2004-01-01T00:00:00+01:00 (literal)

Alternative label

• M. Losurdo, M.M. Giangregorio, M. Luchena, P. Capezzuto, G. Bruno, D. Barreca, A. Gasparotto, E. Tondello (2004)
  Low-temperature growth of HfO2 dielectric layers by Plasma-Enhanced CVD
  in Materials Research Society symposia proceedings
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• M. Losurdo, M.M. Giangregorio, M. Luchena, P. Capezzuto, G. Bruno, D. Barreca, A. Gasparotto, E. Tondello (literal)

Pagina inizio

• E315.1 (literal)

Pagina fine

• E315.6 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 786 (literal)

Rivista

• Materials Research Society symposia proceedings (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 6 (literal)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1,2,3,4,5: IMIP-CNR and INSTM, Department of Chemistry, University of Bari, via Orabona, 4 - 70126 Bari, Italy 6,7,8: ISTM-CNR and INSTM, Department of Chemistry, University of Padova, via Marzolo 1, - 35131 Padova, Italy (literal)

Titolo

• Low-temperature growth of HfO2 dielectric layers by Plasma-Enhanced CVD (literal)

Abstract

• HfO2 dielectric layers have been grown on p-type Si(100) by plasma enhanced chemical vapor deposition (PE-CVD), using Ar-O2 plasmas and hafnium(IV) tetra-t-butoxide as precursors. In-situ control of the plasma phase is carried out by optical emission spectroscopy (OES) and quadrupolar mass spectrometry (QMS). Structural and optical properties of the HfO2 layers and of the HfO2/Si interface are investigated by spectroscopic ellipsometry (SE) in the photon energy range 1.5 - 6.0 eV.. SE data are corroborated by results obtained from glancing incidence X-ray diffraction (GIXRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The effect of the substrate temperature (RT-250°C) and precursor flow on the thickness of interfacial SiO2 layer and on the HfO2 microstructure is investigated. The growth dynamics of HfO2 film and SiO2 interface layer is also discussed. (literal)

Prodotto di

• Progettazione molecolare di nanosistemi organizzati (PM.P05.007.001) (Modulo)
• Institute of molecular science and technologies (ISTM) (Istituto)

Autore CNR

• DAVIDE BARRECA (Unità di personale interno)

Incoming links:

Prodotto

• Institute of molecular science and technologies (ISTM) (Istituto)
• Progettazione molecolare di nanosistemi organizzati (PM.P05.007.001) (Modulo)

Autore CNR di

• DAVIDE BARRECA (Unità di personale interno)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Materials Research Society symposia proceedings (Rivista)