http://www.cnr.it/ontology/cnr/individuo/prodotto/ID47913
Sol-gel synthesis of Zn-thiourea-SiO2 thin films from ((EtO)3Si(CH2)3NHC(=S)NHPh as molecular precursors (Articolo in rivista)
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- Sol-gel synthesis of Zn-thiourea-SiO2 thin films from ((EtO)3Si(CH2)3NHC(=S)NHPh as molecular precursors (Articolo in rivista) (literal)
- Anno
- 2004-01-01T00:00:00+01:00 (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
- 10.1016/j.solidstatesciences.2004.06.007 (literal)
- Alternative label
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Angelova D.; Armelao L.; Barison S.; Fabrizio M; Gross S.; Sassi A.; Seraglia R.; Tondello E.; Trimmel G.; Venzo A. (literal)
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- http://www.elsevier.com/locate/ssscie (literal)
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- 1-INSTM and Department of Chemistry, University of Padova, Via Marzolo, 1 Padova, Italy
2,5,6,7,10 : CNR-ISTM and INSTM, University of Padova, Via Marzolo, 1 Padova, Italy
3,4 : CNR-IENI, Corso Stati Uniti, 4 Padova, Italy
8 : Department of Chemistry, University of Padova, Via Marzolo 1, I-35131 Padova, Italy
9 : Institute for Chemistry and Technology of Organic Materials, Graz University of Technology, Stremayrgasse 16 Graz, Austria (literal)
- Titolo
- Sol-gel synthesis of Zn-thiourea-SiO2 thin films from ((EtO)3Si(CH2)3NHC(=S)NHPh as molecular precursors (literal)
- Abstract
- In order to study new and convenient sol-gel syntheses to homogene ous nanocomposites systems based on zinc sulphide clusters embedded in films of silica glass, a thiourea-functionalized silane ((EtO)3Si(CH2)3NHC(=S)NHPh, SilTu) was investigated as starting precursor. Electrospray ionization mass spectrometry (ESI-MS), FT-IR and N MR spectroscopies clearly evidence that SilTu coordinates
Zn2+ ions in solution through the thiourea function. Both zinc acetate (Zn(CH3COO)2) and zinc chloride (ZnCl2) were used as zinc source. TheSilTu-Zn2+ complex is also stable under sol-gel conditions. Alcoholic solutions of SilTu, zinc acetate and tetraethoxysilane
Si(OEt)4 (TEOS) were used to prepare the thin films by dip-coating. Transparent, homogeneous and crack-free layers were obtained under annealing up to 600 oC. The samples were investigated by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Beside ZnS formation, the presence of oxygenated zinc species was observed inside the silica matrix (literal)
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