Chemical Vapor Deposition of lanthanum oxyfluoride-based thin films from a lanthanum beta-diketonate diglyme Precursor\" (Articolo in rivista)

Type
Label
  • Chemical Vapor Deposition of lanthanum oxyfluoride-based thin films from a lanthanum beta-diketonate diglyme Precursor\" (Articolo in rivista) (literal)
Anno
  • 2005-01-01T00:00:00+01:00 (literal)
Alternative label
  • D. Barreca, A. Gasparotto, C. Maragno, E. Tondello, E. Bontempi, L.E. Depero, C. Sada (2005)
    Chemical Vapor Deposition of lanthanum oxyfluoride-based thin films from a lanthanum beta-diketonate diglyme Precursor"
    in Chemical vapor deposition (Print)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • D. Barreca, A. Gasparotto, C. Maragno, E. Tondello, E. Bontempi, L.E. Depero, C. Sada (literal)
Pagina inizio
  • 426 (literal)
Pagina fine
  • 432 (literal)
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  • 11 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 7 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • 1: ISTM-CNR and INSTM - Department of Chemistry - Padova University - Via Marzolo, 1 - 35131 Padova, Italy 2,3,4: Department of Chemistry - Padova University and INSTM - Via Marzolo, 1 - 35131 Padova, Italy. 5,6: Chemistry for Technologies Laboratory and INSTM - Brescia University - Via Branze, 38 - 25123 Brescia, Italy 7: INFM and Physics Department - Padova University - Via Marzolo, 8 - 35131 Padova, Italy. (literal)
Titolo
  • Chemical Vapor Deposition of lanthanum oxyfluoride-based thin films from a lanthanum beta-diketonate diglyme Precursor\" (literal)
Abstract
  • Lanthanum oxyfluoride-based thin films were grown on SiO2 and Si(100) by CVD from La(hfa)3?diglyme (Hhfa=1,1,1,5,5,5-hexafluoro-2,4-pentanedione; diglyme=bis(2-metoxyethyl)ether), acting both as lanthanum and fluorine source. Film syntheses were performed in nitrogen+wet oxygen atmosphere, with particular attention to the structural and compositional evolution as a function of the deposition temperature (200-500°C). To this aim, specimens were subjected to a multi-technique characterization by means of Glancing Incidence X-Ray Diffraction (GIXRD), X-ray Photoelectron Spectroscopy (XPS), Secondary Ion Mass Spectrometry (SIMS) and Atomic Force Microscopy (AFM). The formation of nanophasic (crystallite size <30 nm) LaOF-containing films, with a cleaner precursor conversion at the highest deposition temperatures, is evidenced and discussed, highlighting the most critical parameters for the obtainment of lanthanum oxyfluoride coatings with controlled properties. (literal)
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