Densification and mechanical behavior of HfC and HfB2 fabricated by Spark Plasma Sintering (Articolo in rivista)

Type
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  • Densification and mechanical behavior of HfC and HfB2 fabricated by Spark Plasma Sintering (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1111/j.1551-2916.2007.02248.x (literal)
Alternative label
  • Diletta Sciti; Stefano Guicciardi; Mats Nygren (2008)
    Densification and mechanical behavior of HfC and HfB2 fabricated by Spark Plasma Sintering
    in Journal of the American Ceramic Society
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Diletta Sciti; Stefano Guicciardi; Mats Nygren (literal)
Pagina inizio
  • 1433 (literal)
Pagina fine
  • 1440 (literal)
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  • http://onlinelibrary.wiley.com/doi/10.1111/j.1551-2916.2007.02248.x/abstract (literal)
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  • 91 (literal)
Rivista
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  • In: Journal of the American Ceramic Society, vol. 91 (5) pp. 1433 - 1440. Presented at the AFOSR Workshop on Ultra-High-Temperature Ceramic Materials hosted by SRI International, July 23-25, 2007. Wiley on behalf of the American Ceramic Society (ACerS), 2008. (literal)
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  • 8 (literal)
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  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
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  • Diletta Sciti, Stefano Guicciardi (CNR-ISTEC, Institute of Science and Technology for Ceramics, I-48018 Faenza, Italy) Mats Nygren (Arrhenius Laboratory, Department of Inorganic Chemistry, Stockholm University, SE-10691 Stockholm, Sweden) (literal)
Titolo
  • Densification and mechanical behavior of HfC and HfB2 fabricated by Spark Plasma Sintering (literal)
Abstract
  • Hafnium diboride (HfB2)- and hafnium carbide (HfC)-based materials containing MoSi2 as sintering aid in the volumetric range 1%-9% were densified by spark plasma sintering at temperatures between 17501 and 1950°C. Fully dense samples were obtained with an initial MoSi2 content of 3 and 9 vol% at 17501-1800°C. When the doping level was reduced, it was necessary to raise the sintering temperature in order to obtain samples with densities higher than 97%. Undoped powders had to be sintered at 21001-2200°C. For doped materials, fine microstructures were obtained when the thermal treatment was lower than 1850°C. Silicon carbide formation was observed in both carbideand boride-based materials. Nanoindentation hardness values were in the range of 25-28 GPa and were independent of the starting composition. The nanoindentation Young's modulus and the fracture toughness of the HfB2-based materials were higher than those of the HfC-based materials. The flexural strength of the HfB2-based material with 9 vol% of MoSi2 was higher at 1500°C than at room temperature. (literal)
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