Analysis of nanoindentation loading curves in SiC and SiO2 materials (Articolo in rivista)

Type
Label
  • Analysis of nanoindentation loading curves in SiC and SiO2 materials (Articolo in rivista) (literal)
Anno
  • 2007-01-01T00:00:00+01:00 (literal)
Alternative label
  • S. Guicciardi, G. Pezzotti (2007)
    Analysis of nanoindentation loading curves in SiC and SiO2 materials
    in Journal of the Ceramic Society of Japan (Online)
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • S. Guicciardi, G. Pezzotti (literal)
Pagina inizio
  • 186 (literal)
Pagina fine
  • 190 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 115 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • CNR-ISTEC; Kyoto Institute of Technology, Japan (literal)
Titolo
  • Analysis of nanoindentation loading curves in SiC and SiO2 materials (literal)
Abstract
  • On two SiC and a standard fused silica specimen, depth-sensing indentation tests with a Berkovich indenter were carried out at several peak loads. The loading part of the load-displacement curves were statistically analyzed and it was shown that the loading exponent of the relation P-h^n was lower than the expected value of 2 in most of the cases. Factors affecting the loading exponent have been considered and evaluated. It was demonstrated that their effect was minimal on the fitting results. (literal)
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Autore CNR

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