In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN : H heterostructures (Articolo in rivista)

Type
Label
  • In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN : H heterostructures (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2981689 (literal)
Alternative label
  • Felisari, L; Grillo, V; Martelli, F; Trotta, R; Polimeni, A; Capizzi, M; Jabeen, F; Mariucci, L (2008)
    In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN : H heterostructures
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Felisari, L; Grillo, V; Martelli, F; Trotta, R; Polimeni, A; Capizzi, M; Jabeen, F; Mariucci, L (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 93 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[Felisari, L.; Grillo, V.; Martelli, F.; Jabeen, F.] TASC INFM CNR, I-34012 Trieste, Italy; [Trotta, R.; Polimeni, A.; Capizzi, M.] Univ Roma La Sapienza, CNISM, I-00185 Rome, Italy; [Trotta, R.; Polimeni, A.; Capizzi, M.] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy; [Jabeen, F.] Sincrotrone Trieste SCpA, I-34012 Trieste, Italy; [Mariucci, L.] IFN CNR, I-00156 Rome, Italy (literal)
Titolo
  • In-plane band gap modulation investigated by secondary electron imaging of GaAsN/GaAsN : H heterostructures (literal)
Abstract
  • GaAsN/GaAsN:H in-plane heterostructures have been investigated by secondary electron (SE) imaging in a field-emission scanning electron microscope. Adjacent GaAsN and GaAsN: H regions show a quite different SE image brightness due to the band gap energy difference between H-free and H-irradiated GaAsN. These findings provide a useful means to characterize the lateral diffusion of H and well support secondary ion mass spectroscopy results regarding the importance of a low hydrogenation temperature in order to obtain sharply defined in-plane heterostructures. c 2008 American Institute of Physics. (literal)
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