Fidelity optimization for holonomic quantum gates in dissipative environments (Articolo in rivista)

Type
Label
  • Fidelity optimization for holonomic quantum gates in dissipative environments (Articolo in rivista) (literal)
Anno
  • 2006-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1103/PhysRevA.73.052304 (literal)
Alternative label
  • Parodi, D (1,2); Sassetti, M(1,3); Solinas, P(1,2); Zanardi(4), P; Zanghi, N (1,2) (2006)
    Fidelity optimization for holonomic quantum gates in dissipative environments
    in Physical review. A
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Parodi, D (1,2); Sassetti, M(1,3); Solinas, P(1,2); Zanardi(4), P; Zanghi, N (1,2) (literal)
Pagina inizio
  • 052304 (literal)
Pagina fine
  • 052308 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#altreInformazioni
  • Theoretical work on holonomic quantum gates in semiconductor quantum dots (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 73 (literal)
Rivista
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  • 5 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • (1) Dipartimento di Fisica, Università di Genova, Via Dodecaneso 33, 16146 Genova, Italy (2) Istituto Nazionale di Fisica Nucleare (Sezione di Genova), Via Dodecaneso 33, 16146 Genova, Italy (3) INFM-CNR Lamia, Via Dodecaneso 33, 16146 Genova, Italy (4) Institute for Scientific Interchange, Viale Settimio Severo 65, 10133 Torino, Italy Univ Genoa, Dipartimento Fis, I-16146 Genoa, Italy; Ist Nazl Fis Nucl, Sez Genova, I-16146 Genoa, Italy; INFM, CNR Lamia, I-16146 Genoa, Italy; Inst Sci Interchange, I-10133 Turin, Italy (literal)
Titolo
  • Fidelity optimization for holonomic quantum gates in dissipative environments (literal)
Abstract
  • We analyze the performance of holonomic quantum gates in semiconductor quantum dots, driven by ultrafast lasers, under the effect of a dissipative environment. The environment is modeled as a thermal bath of oscillators linearly coupled with the electron states of the quantum dot. Standard techniques make the problem amenable to a numerical treatment and allow one to determine the fidelity as a function of all the relevant physical parameters. As a consequence of our analysis, we show that the disturbance of the environment can be (approximately) suppressed and the performance of the gate optimized-provided that the thermal bath is purely super-Ohmic. We conclude by showing that such an optimization is impossible for Ohmic environments. (literal)
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