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High-stability 72 GHz Gunn oscillator for the characterization of ultra-high-speed optical receivers based on InP and InSb Shottky diodes (Articolo in rivista)
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- Label
- High-stability 72 GHz Gunn oscillator for the characterization of ultra-high-speed optical receivers based on InP and InSb Shottky diodes (Articolo in rivista) (literal)
- Anno
- 2003-01-01T00:00:00+01:00 (literal)
- Alternative label
Galzerano G.1, Svelto C. 2, Bava E. 3, Carelli G. 4, Finotti M. 5, Moretti A.6, Beverini N. 7 (2003)
High-stability 72 GHz Gunn oscillator for the characterization of ultra-high-speed optical receivers based on InP and InSb Shottky diodes
in IEEE transactions on instrumentation and measurement
(literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
- Galzerano G.1, Svelto C. 2, Bava E. 3, Carelli G. 4, Finotti M. 5, Moretti A.6, Beverini N. 7 (literal)
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- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
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- ISI Web of Science (WOS) (literal)
- Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
- 1: INFN-CNR, Dipartimento di Fisica, Politecnico di Milano
2,3: INFM,Dipartimento di Elettronica e Informazione, Politecnico di Milano
4,5,7: INFM, Dipartimento di Fisica, Università di Pisa
6: IPCF, CNR Pisa e INFM, sezione di Pisa (literal)
- Titolo
- High-stability 72 GHz Gunn oscillator for the characterization of ultra-high-speed optical receivers based on InP and InSb Shottky diodes (literal)
- Abstract
- A high-stability and excellent spectral purity 72-GHz Gunn oscillator was realized to characterize ultra-wide-band Schottky diodes based on intrinsic InP InSb semiconductors. The developed microwave oscillator shows a relative frequency stability of 2x 10-9 for observation times of 1 s and a collapse frequency of 4THz. Preliminary frequency measurements of different emission lines of a far infrared laser demonstrate good detection efficiency with a typical bandwidth of a 1 THz for these novel optical receivers. (literal)
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