InAs nanowire metal-oxide-semiconductor capacitors (Articolo in rivista)

Type
Label
  • InAs nanowire metal-oxide-semiconductor capacitors (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi
  • 10.1063/1.2949080 (literal)
Alternative label
  • Roddaro, S; Nilsson, K; Astromskas, G; Samuelson, L; Wernersson, LE; Karlstrom, O; Wacker, A (2008)
    InAs nanowire metal-oxide-semiconductor capacitors
    in Applied physics letters
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Roddaro, S; Nilsson, K; Astromskas, G; Samuelson, L; Wernersson, LE; Karlstrom, O; Wacker, A (literal)
Pagina inizio
  • 253509 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url
  • http://dx.doi.org/10.1063/1.2949080 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 92 (literal)
Rivista
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali
  • 3 (literal)
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • The Nanometer Structure Consortium, Lund University, P.O.Box 118, 22100 Lund, Sweden Mathematical Physics, Lund University, P.O. Box 118, 2100 Lund, Sweden (literal)
Titolo
  • InAs nanowire metal-oxide-semiconductor capacitors (literal)
Abstract
  • We present a capacitance-voltage study for arrays of vertical InAs nanowires. Metal-oxide-semiconductor (MOS) capacitors are obtained by insulating the nanowires with a conformal 10 nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface. (c) 2008 American Institute of Physics. (literal)
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