High-field transport in semiconductor superlattices for interacting Wannier-Stark levels (Articolo in rivista)

Type
Label
  • High-field transport in semiconductor superlattices for interacting Wannier-Stark levels (Articolo in rivista) (literal)
Anno
  • 2008-01-01T00:00:00+01:00 (literal)
Alternative label
  • Guida, A; Reggiani, L; Rosini, M (2008)
    High-field transport in semiconductor superlattices for interacting Wannier-Stark levels
    in Superlattices and microstructures
    (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori
  • Guida, A; Reggiani, L; Rosini, M (literal)
Pagina inizio
  • 249 (literal)
Pagina fine
  • 258 (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume
  • 44 (literal)
Rivista
Note
  • ISI Web of Science (WOS) (literal)
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni
  • \"[Rosini, Marcello] Univ Modena & Reggio Emilia, Dipartimento Fis, I-4100 Modena, Italy; [Rosini, Marcello] CNR INFM, Natl Res Ctr S3, I-4100 Modena, Italy; [Reggiani, Lino] Univ Salento, Dipartimento Ingn Innovaz, I-73100 Lecce, Italy; [Reggiani, Lino] Univ Salento, CNISM, I-73100 Lecce, Italy; [Guida, Angelo] Univ Salento, Dipartimento Fis, I-73100 Lecce, Italy (literal)
Titolo
  • High-field transport in semiconductor superlattices for interacting Wannier-Stark levels (literal)
Abstract
  • We developed a microscopic theory of electron transport in superlattices within the Wannier-Stark approach by including the interaction associated with Zener tunneling between the energy levels pertaining to adjacent quantum wells. By using a Monte Carlo technique we have simulated the hopping motion associated with absorption and emission of polar optical phonons and determined the main transport parameters for the case of a GaAs/GaAlAs structure at room temperature. Interaction between the levels is found to be responsible for a systematic increase of the level energy with respect to the bottom of the quantum well at electric fields above about 20 kV/cm. When compared with the non-interacting case, at the highest fields the average carrier energy evidences a consistent increase, which leads to a significant softening of the negative slope of both the drift velocity and diffusivity versus electric field behavior. (C) 2008 Elsevier Ltd. All rights reserved. (literal)
Prodotto di
Autore CNR
Insieme di parole chiave

Incoming links:


Autore CNR di
Prodotto
Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi
Insieme di parole chiave di
data.CNR.it