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Unification of bulk and interface electroresistive switching in oxide systems (Articolo in rivista)

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Unification of bulk and interface electroresistive switching in oxide systems (Articolo in rivista) (literal)

Anno

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Alternative label

Ruotolo, A; Leung, CW; Lam, CY; Cheng, WF; Wong, KH; Pepe, GP (2008)
Unification of bulk and interface electroresistive switching in oxide systems
in Physical review. B, Condensed matter and materials physics
(literal)

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\"[Ruotolo, A.] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China; Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China; [Pepe, G. P.] Univ Naples Federico 2, CNR INFM Coherentia, I-80125 Naples, Italy; [Pepe, G. P.] Univ Naples Federico 2, Dipartimento Sci Fisiche, I-80125 Naples, Italy (literal)

Titolo

Unification of bulk and interface electroresistive switching in oxide systems (literal)

Abstract

We demonstrate that the physical mechanism behind electroresistive switching in oxide Schottky systems is electroformation, as in insulating oxides. Negative resistance shown by the hysteretic current-voltage curves proves that impact ionization is at the origin of the switching. Analyses of the capacitance-voltage and conductance-voltage curves through a simple model show that an atomic rearrangement is involved in the process. Switching in these systems is a bulk effect, not strictly confined at the interface but at the charge space region. (literal)

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