Development of High Con Coff Ratio RF MEMS Shunt Switches (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Development of High Con Coff Ratio RF MEMS Shunt Switches (Articolo in rivista) (literal)

Anno

• 2008-01-01T00:00:00+01:00 (literal)

Alternative label

• Giacomozzi F, Calaza C, Colpo S, Mulloni V, Collini C, Margesin B, Farinelli P, Casini F, Marcelli R, Mannocchi G, and Vietzorreck L (2008)
  Development of High Con Coff Ratio RF MEMS Shunt Switches
  in Romanian Journal of Information Science and Technology
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Giacomozzi F, Calaza C, Colpo S, Mulloni V, Collini C, Margesin B, Farinelli P, Casini F, Marcelli R, Mannocchi G, and Vietzorreck L (literal)

Pagina inizio

• 143 (literal)

Pagina fine

• 151 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#url

• http://www.imt.ro/romjist/ (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 11 (literal)

Rivista

• Romanian Journal of Information Science and Technology (Rivista)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#pagineTotali

• 9 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroFascicolo

• 2 (literal)

Note

• Scopu (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• a FBK, Via Sommarrive 14, 38050 Trento, Italy b University of Perugia, DIEI, Via G. Duranti 93, 06125 Perugia, Italy c CNR-IMM Roma, Via del Fosso del Cavaliere 100, 00133 Rome, Italy d Thales Alenia Space Italia, Via Saccomuro 24, 00131 Rome, Italy e Technische UniversitÄat MÄunchen, Lehrstuhl fÄur Hochfrequenztechnik, Arcisstr. 21, D-80333 MÄunchen, Germany (literal)

Titolo

• Development of High Con Coff Ratio RF MEMS Shunt Switches (literal)

Abstract

• This paper reports on the successive improvements introduced in the shunt switches fabricated with the RF MEMS multiuser technology platform available at FBK. In the course of a multiyear development several technological features and design methods have been made available to enhance the operation of capacitive switches. This work analyzes their effects by reviewing the behaviour of the FBK capacitive switches at three different stages of this optimization process. Improvements have been assessed by means of DC electromechanical characterizations, which use a simple quasistatic C-V measurement to extract the switch actuation voltage and the capacitance in the on and off states (Con and Coff) and RF measurements. The addition of a floating metal layer into the process flow has allowed a great increase of the switch on state capacitances, getting C off/Con ratios of 200, up to 50 times greater than the ones obtained for the same structures without this feature. (literal)

Prodotto di

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi ad Alta Frequenza: Tecnologie ed Affidabilità per Applicazioni di Terra e Spaziali (MD.P05.020.001) (Modulo)

Autore CNR

• ROMOLO MARCELLI (Persona)

Insieme di parole chiave

• Keywords of "Development of High Con Coff Ratio RF MEMS Shunt Switches" (Insieme di parole chiave)

Incoming links:

Autore CNR di

• ROMOLO MARCELLI (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Microsistemi ad Alta Frequenza: Tecnologie ed Affidabilità per Applicazioni di Terra e Spaziali (MD.P05.020.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Romanian Journal of Information Science and Technology (Rivista)

Insieme di parole chiave di

• Keywords of "Development of High Con Coff Ratio RF MEMS Shunt Switches" (Insieme di parole chiave)