Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO(2) switching layer (Articolo in rivista)

Type

• Prodotto della ricerca (Classe)
• Articolo in rivista (Classe)

Label

• Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO(2) switching layer (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Alternative label

• Muller Ch, Deleruyelle D, Mueller R, Thomas M, Demolliens A, Turquat Ch, Spiga S (2011)
  Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO(2) switching layer
  in Solid-state electronics
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Muller Ch, Deleruyelle D, Mueller R, Thomas M, Demolliens A, Turquat Ch, Spiga S (literal)

Pagina inizio

• 168 (literal)

Pagina fine

• 174 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 56 (literal)

Rivista

• Solid-state electronics (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. Aix Marseille Univ, UMR CNRS 6242, Inst Mat Microelect & Nanosci Provence, Im 2np, F-13451 Marseille 20, France 2. Interuniv Microelect Ctr, IMEC, B-3001 Louvain, Belgium 3. Univ Sud Toulon Var, UMR CNRS 6242, Inst Mat Microelect & Nanosci Provence, Im2np, F-83957 La Garde, France 4. IMM CNR, Lab MDM, I-20041 Agrate Brianza, Italy (literal)

Titolo

• Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO(2) switching layer (literal)

Abstract

• The present paper deals with the bipolar resistive switching of memory elements based on metal-organic complex CuTCNQ (copper-7,7',8,8'-tetracyanoquinodimethane) nanowires grown on a dedicated HfO(2) oxide switching layer. Switching characteristics are explored either at millimeter scale on pad-size devices or at nanoscale by using conductive atomic force microscopy. Whatever the investigation scales, the basic memory characteristics appear to be controlled by copper ionic transport within a switching layer. This latter corresponds to either HfO(2) layer in pad-size devices or nanogap formed at nanoscale between the atomic force microscopy conductive tip and CuTCNQ surface. Depending upon the observation scale, the switching layer (either HfO(2) oxide or nanogap) acts as a matrix in which copper conductive bridges are formed and dissolved thanks to redox processes controlled in alternating applied bias voltages. (literal)

Prodotto di

• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)
• Materiali autoassemblanti per applicazioni nanotecnologiche (MD.P05.025.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• SABINA SPIGA (Persona)

Incoming links:

Autore CNR di

• SABINA SPIGA (Persona)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)
• Materiali autoassemblanti per applicazioni nanotecnologiche (MD.P05.025.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Solid-state electronics (Rivista)