Exploiting optical near fields for phase change memories (Articolo in rivista)

Type

• Articolo in rivista (Classe)
• Prodotto della ricerca (Classe)

Label

• Exploiting optical near fields for phase change memories (Articolo in rivista) (literal)

Anno

• 2011-01-01T00:00:00+01:00 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#doi

• 10.1063/1.3533395 (literal)

Alternative label

• Leiprecht P 1; Kuehler P 2; Longo M 3; Leiderer P 2; Afonso C N 1; Siegel J 1 (2011)
  Exploiting optical near fields for phase change memories
  in Applied physics letters
  (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#autori

• Leiprecht P 1; Kuehler P 2; Longo M 3; Leiderer P 2; Afonso C N 1; Siegel J 1 (literal)

Pagina inizio

• 13103 (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#numeroVolume

• 98 (literal)

Rivista

• Applied physics letters (Rivista)

Note

• ISI Web of Science (WOS) (literal)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#affiliazioni

• 1. CSIC, Inst Opt, Laser Proc Grp, E-28006 Madrid, Spain 2. Univ Konstanz, Fac Phys, D-78457 Constance, Germany 3. CNR, IMM, Lab MDM, I-20041 Agrate Brianza, MB, Italy (literal)

Titolo

• Exploiting optical near fields for phase change memories (literal)

Abstract

• We apply a recently developed technique based on optical near fields to achieve reversible phase switching in Ge(2)Sb(2)Te(5) films. By placing dielectric microspheres at the film surface and exposing them to pulsed laser light, a complex intensity distribution due to the optical near field can be created at the film surface. We demonstrate writing and erasing operations of patterns through phase switching. Spheres can be removed after an operation by optical near fields without ablation. Data erasure is achieved with and without near fields. The erasure method used can be determined from the result and erased information can be retrieved although being inverted. Three distinct material states are identified within patterns, showing clear contrast and sharp borders between them, thus opening the possibility of three-level data storage. Our results suggest that optical near fields are a promising candidate for developing strategies in data storage, encryption, and multiplexing. (literal)

Prodotto di

• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)
• Institute for microelectronics and microsystems (IMM) (Istituto)

Autore CNR

• MASSIMO LONGO (Unità di personale interno)

Incoming links:

Autore CNR di

• MASSIMO LONGO (Unità di personale interno)

Prodotto

• Institute for microelectronics and microsystems (IMM) (Istituto)
• Materiali e dispositivi nanoscalati per applicazioni in memorie non-volatili, architetture neuromorfiche e neuroelettronica (MD.P05.024.001) (Modulo)

Http://www.cnr.it/ontology/cnr/pubblicazioni.owl#rivistaDi

• Applied physics letters (Rivista)